SS22T3G ON Semiconductor, SS22T3G Datasheet - Page 4

• Manufacturer Part Number: SS22T3G
• Description: DIODE SCHOTTKY 2A 40V SMB
• Manufacturer: ON Semiconductor

Specifications of SS22T3G

• Voltage - Forward (vf) (max) @ If: 500mV @ 2A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 400µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

1000
1.0E+00
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E+00
1.0E−01
1.0E−02
1.0E−03
1.0E−04
100
10
0
0.00001
0.00001
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
T
This graph displays the derated allowable T
where r(t) = Rthja. For other power applications further calculations must be performed.
5.0%
2.0%
1.0%
5.0%
2.0%
1.0%
50%
20%
10%
50%
20%
10%
J
5.0
may be calculated from the equation:
10
V
R
R
R
Figure 7. Capacitance
0.0001
0.0001
, REVERSE VOLTAGE (VOLTS)
tjl(t)
tjl(t)
= R
= R
15
tjl*r(t)
tjl*r(t)
20
Figure 10. Thermal Response — Junction to Ambient
Figure 9. Thermal Response — Junction to Case
0.001
0.001
25
30
T
J
= 25°C
J
J
therefore must include forward and reverse power effects. The allowable operating
due to reverse bias under DC conditions only and is calculated as T
0.01
0.01
35
T
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
http://onsemi.com
J
= T
SS22, SS24
Jmax
40
t, TIME (s)
t, TIME (s)
4
− r(t)(Pf + Pr) where
0.1
0.1
125
105
115
95
85
75
65
Figure 8. Typical Operating Temperature Derating*
0
5.0
1.0
1.0
V
10
R
, DC REVERSE VOLTAGE (VOLTS)
43°C/W
15
10
10
63°C/W
20
25
80°C/W
100
100
30
J
= T
R
tja
Jmax
= 24°C/W
93°C/W
35
− r(t)Pr,
1000
1000
40