IRG4BC40UPBF International Rectifier, IRG4BC40UPBF Datasheet - Page 4
![IGBT UFAST 600V 40A TO220AB](/photos/5/40/54079/to-220ab_sml.jpg)
IRG4BC40UPBF
Manufacturer Part Number
IRG4BC40UPBF
Description
IGBT UFAST 600V 40A TO220AB
Manufacturer
International Rectifier
Type
Ultrafastr
Specifications of IRG4BC40UPBF
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Capacitance, Gate
2100 pF
Current, Collector
40 A
Energy Rating
15 mJ
Package Type
TO-220AB
Polarity
N-Channel
Power Dissipation
160 W
Resistance, Thermal, Junction To Case
0.77 °C/W
Speed, Switching
8 to 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Transistor Type
NPN
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
2.15 V
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
40A
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Dc Collector Current
40A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
*IRG4BC40UPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Fig. 4 - Maximum Collector Current vs. Case
4
0 .0 1
4 0
3 0
2 0
1 0
0 .1
0
0 .0 0 0 0 1
1
2 5
D = 0 .5 0
0.2 0
0.1 0
0 .05
0.0 2
0.0 1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
T , Case Temperature (°C)
5 0
C
Temperature
0 .0 0 0 1
7 5
(T H ER M A L R E SP O NS E )
SIN G LE P UL SE
1 0 0
V
t , R ectangular Pulse Duration (sec)
0 .0 0 1
1 2 5
1
G E
= 15V
1 5 0
A
0 .0 1
Fig. 5 - Collector-to-Emitter Voltage vs.
2.5
2.0
1.5
1.0
-60
V
80µs PULSE WIDTH
G E
-40
Junction Temperature
= 15V
-20
N o te s:
1 . D u ty fa c to r D = t / t
2 . P e a k T = P
T , Junction Temperature (°C)
0 .1
J
0
J
2 0
D M
4 0
x Z
1
6 0
th J C
2
P
1
D M
8 0
+ T
1 0 0 1 2 0 1 4 0 1 6 0
C
www.irf.com
t
1
I
I
t 2
C
I
C
C
= 20A
= 10A
= 40A
1 0
A