IRG4IBC30UDPBF International Rectifier, IRG4IBC30UDPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4IBC30UDPBF
• Description: IGBT W/DIODE 600V 17A TO220FP
• Manufacturer: International Rectifier

Specifications of IRG4IBC30UDPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 12A
• Current - Collector (ic) (max): 17A
• Power - Max: 45W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 17A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 45W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4IBC30UDPBF

Electrical Characteristics @ T
Switching Characteristics @ T
V
∆V
V
V
∆
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
V
E
fe
(BR)CES
CE(on)
GE(th)
on
FM
off
ts
ts
ies
oes
res
g
gc
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/
∆
/∆T
T
J
J
Gate - Emitter Charge (turn-on)
Collector-to-Emitter Breakdown Voltageƒ 600
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
„
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.63 –––
––– 1.95
––– 2.52
––– 2.09
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.38
––– 0.16
–––
–––
–––
–––
––– 0.89
–––
––– 1100 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.54
3.0
3.1
–––
–––
–––
––– 2500
––– ±100
120
180
220
180
120
-11
8.6
1.4
1.3
8.1
7.5
3.5
5.6
50
18
40
21
91
80
40
22
73
14
42
80
80
–––
–––
–––
––– mV/°C V
–––
250
–––
–––
140
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
120
180
600
–––
–––
2.1
6.0
1.7
1.6
0.9
6.0
75
12
27
60
10
V/°C
A/µs
µA
nA
mJ
mJ
nC
nH
nC
pF
V
V
S
V
ns
ns
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 12A, T
= 12A, T
= 12A, V
= 12A, V
= 12A
= 23A
= 12A
= 12A
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
C
C
See Fig.
See Fig.
= 150°C
= 150°C
Conditions
Conditions
= 250µA
See Fig.
See Fig.
= 1.0mA
G
G
C
= 250µA
= 250µA
= 480V
= 480V
= 600V
= 600V, T
See Fig. 9, 10, 11, 18
= 12A
= 23Ω
= 23Ω
14
15
17
16
See Fig. 8
www.irf.com
See Fig. 7
V
See Fig. 2, 5
See Fig. 13
di/dt 200A/µs
J
GE
I
= 150°C
V
F
R
= 12A
= 15V
= 200V