IRGB30B60KPBF International Rectifier, IRGB30B60KPBF Datasheet - Page 2
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IRGB30B60KPBF
Manufacturer Part Number
IRGB30B60KPBF
Description
IGBT 600V 78A TO220AB
Manufacturer
International Rectifier
Specifications of IRGB30B60KPBF
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.35V @ 15V, 30A
Current - Collector (ic) (max)
78A
Power - Max
370W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Package Type
TO-220AB
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
175C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
78A
Collector Emitter Voltage Vces
2.35V
Power Dissipation Pd
370W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +175°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRGB30B60KPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRGB30B60KPBF
Manufacturer:
INFINEON
Quantity:
12 000
Electrical Characteristics @ T
V
∆V
V
V
∆V
gfe
I
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
L
C
C
C
RBSOA
SCSOA
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
SC
2
Note
E
(BR)CES
CE(on)
GE(th)
on
off
tot
on
off
tot
ies
oes
res
g
ge
gc
(BR)CES
GE(th)
(Peak)
IRGB30B60KPbF, IRGS/L30B60K
/∆T
/∆T
J
to
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Peak Short Circuit Collector Current
are on page 13
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.5
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
1000
1830
1175
1150
1785
1750
0.40
1.95
2.40
102
200
350
825
185
635
205
160
-10
2.6
4.5
5.0
7.5
—
18
—
14
44
46
28
31
46
28
32
60
—
2000
3000
1575
1085
1350
2435
2500
2.35
2.75
2.95
±100
250
153
620
955
200
235
255
5.5
21
66
60
39
40
60
39
42
90
—
—
—
—
—
—
—
mV/°C V
V/°C V
nC V
nH Measured 5mm from package
µA
nA
pF
µJ
ns
µJ
ns
µs
V
V
V
S
A
V
I
I
I
V
V
V
V
V
V
I
V
I
V
T
I
V
T
I
V
T
I
V
T
V
V
T
V
T
V
f = 1.0MHz
C
C
C
C
C
C
C
C
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
GE
GE
GE
GE
GE
CC
CC
CC
= 30A, V
= 30A, V
= 30A, V
= 30A
= 30A, V
= 30A, V
= 30A, V
= 30A, V
= 25°C
= 25°C
= 150°C
= 150°C
= 150°C, I
= 150°C, Vp = 600V, R
=500V,V
=360V,V
= V
= V
= 50V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= 0V, V
= ±20V, V
= 400V
= 15V, R
= 15V, R
= 15V, R
= 15V, R
= 0V
= 30V
Conditions
= 15V
GE
GE
, I
, I
C
C
GE
GE
GE
CC
CC
CC
CC
C
C
CE
CE
CE
C
GE
GE
= 500µA
= 1mA (25°C-150°C)
C
G
G
G
G
Conditions
= 250µA
= 1.0mA (25°C-150°C)
= 15V, T
= 15V, T
= 15V, T
= 50A, PW = 80µs
= 400V
= 400V
= 400V
= 400V
CE
= 600V
= 600V, T
= 600V, T
= 120A, Vp = 600V
= 10Ω, L = 200µH
= 10Ω, L = 200µH
= 10Ω, L = 200µH
= 10Ω, L = 200µH
= +15V to 0V,R
= +15V to 0V
= 0V
J
J
J
= 25°C
= 150°C
= 175°C
J
J
G
= 150°C
= 175°C
www.irf.com
= 10Ω
G
=10Ω
Ref.Fig.
Ref.Fig.
WF1,WF2
8,9,10
8,9,10
12,14
13,15
5,6,7
WF1
WF2
WF3
WF3
CT1
CT4
CT4
CT4
CT4
CT2
CT3
11
17
16
4