IRG4PH20KDPBF International Rectifier, IRG4PH20KDPBF Datasheet
IRG4PH20KDPBF
Specifications of IRG4PH20KDPBF
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IRG4PH20KDPBF Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, t =10µ 720V , T = 125° 15V GE • Combines low conduction losses ...
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IRG4PH20KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) ...
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rate d volta 0.1 Fig Typical Load Current vs. ...
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IRG4PH20KD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL ...
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1MHz ies res oes ce gc 600 C ies 400 200 C oes C res 0 ...
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IRG4PH20KD 4 5.0Ohm 150 C ° 960V 800V 15V 3.2 GE 2.4 1.6 0.8 0 Collector Current (A) C Fig Typical ...
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5 ° ...
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IRG4PH20KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...
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Figure 18e. Macro Waveforms for 50V µ Figure 19. Clamped Inductive Load Test Circuit www.irf.com ...
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IRG4PH20KD Notes: Repetitive rating: V =20V; pulse width limited by maximum junction tem- GE perature (figure 20) V =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor Pulse width 5.0µs, single shot. Case Outline - ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...