IRGS4056DPBF International Rectifier, IRGS4056DPBF Datasheet - Page 2

• Manufacturer Part Number: IRGS4056DPBF
• Description: IGBT 600V 12A COPACK D2PAK
• Manufacturer: International Rectifier

Specifications of IRGS4056DPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 12A
• Current - Collector (ic) (max): 24A
• Power - Max: 140W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Type: IGBT
• Dc Collector Current: 24A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 140W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +175°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRGS4056DPbF
Notes:

‚
ƒ
„
Electrical Characteristics @ T
V
∆V
V
V
∆V
gfe
I
V
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
SCSOA
Erec
t
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
(BR)CES
CE(on)
GE(th)
FM
on
off
total
on
off
total
ies
oes
res
g
ge
gc
V
This is only applied to TO-220AB package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
GE(th)
2
CC
= 80% (V
/∆TJ
/∆T
J
CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
), V
GE
= 20V, L = 100µH, R
Parameter
Parameter
J
J
G
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
= 22Ω.
(BR)CES
safely.
Min.
Min.
600
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
5
Typ.
Typ.
0.30
1.55
1.90
1.97
2.10
1.61
475
225
300
185
355
540
102
765
280
-18
7.7
2.0
7.0
31
30
23
19
—
—
—
25
11
75
17
83
24
18
41
52
—
68
Max. Units
Max. Units
1.85
3.10
±100
118
273
391
6.5
25
16
40
—
—
—
—
—
—
—
—
38
11
24
94
31
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C V
µA
nA
nC
pF
µJ
ns
µJ
ns
µs
µJ
ns
V
V
V
S
V
A
V
I
I
I
V
V
V
V
I
I
V
I
V
V
I
R
Energy losses include tail & diode reverse recovery
I
R
I
R
Energy losses include tail & diode reverse recovery
I
R
T
V
V
f = 1.0Mhz
T
V
Rg = 22Ω, V
V
Rg = 22Ω, V
T
V
V
C
C
C
F
F
C
C
C
C
C
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
G
G
G
G
GE
CC
CC
CC
CC
GE
= 12A
= 12A, T
= 12A, V
= 12A, V
= 12A, V
= 12A
= 12A, V
= 12A, V
= 12A, V
= 12A, V
=22Ω, L=100µH, L
= 175°C
= 175°C, I
= 175°C
= 22Ω, L = 200µH, L
= 22Ω, L = 200µH, L
= 22Ω, L = 200µH, L
= V
= V
= 50V, I
= 400V
= 30V
= 480V, Vp =600V
= 400V, Vp =600V
= 400V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 15V
= 0V
= 15V, Rg = 22Ω, L =200µH, L
Conditions
GE
GE
, I
, I
J
C
C
GE
GE
GE
CC
CC
CC
CC
C
C
CE
CE
C
= 175°C
GE
GE
= 100µA
= 1mA (25°C-175°C)
C
= 350µA
= 1.0mA (25°C - 175°C)
F
= 12A, PW = 80µs
= 15V, T
= 15V, T
= 15V, T
= 400V, V
= 400V, V
= 400V, V
= 400V, V
= 600V
= 600V, T
= 48A
= 12A
= +15V to 0V
= +15V to 0V
Conditions
S
=150nH, T
J
J
J
= 25°C
= 150°C
= 175°C
GE
S
GE
S
GE
GE
S
J
= 150nH, T
= 150nH, T
= 150nH
= 175°C
=15V
= 15V
= 15V
= 15V
J
= 175°C
s
= 150nH
J
J
= 25°C
= 25°C
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WF1, WF2
17, 18, 19
22, CT3
Ref.Fig
9,10,11
Ref.Fig
11, 12
13, 15
14, 16
20, 21
9, 10,
5,6,7
WF1
WF2
WF4
CT6
CT6
CT1
CT4
CT4
CT4
CT4
CT2
WF3
24
23
8
4