IRGSL4062DPBF International Rectifier, IRGSL4062DPBF Datasheet - Page 5

• Manufacturer Part Number: IRGSL4062DPBF
• Description: IGBT 600V 24A COPACK TO-262
• Manufacturer: International Rectifier

Specifications of IRGSL4062DPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.95V @ 15V, 24A
• Current - Collector (ic) (max): 48A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 48A
• Collector Emitter Voltage Vces: 1.6V
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-262
• Rohs Compliant: Yes
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 48A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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T
J
= 175°C; L = 200µH; V
T
J
= 175°C; L = 200µH; V
1600
1400
1200
1000
1800
1600
1400
1200
1000
800
600
400
200
800
600
400
200
40
35
30
25
20
15
10
0
0
Fig. 15 - Typ. Energy Loss vs. R
0
Fig. 17 - Typ. Diode I
0
0
Fig. 13 - Typ. Energy Loss vs. I
10
10
25
E ON
T
J
20
20
CE
= 175°C
CE
E OFF
R G = 100Ω
50
R G = 47Ω
R G = 22Ω
R G = 10Ω
= 400V, I
= 400V, R
Rg (Ω)
I C (A)
I F (A)
E OFF
30
30
E ON
75
RR
40
40
CE
G
vs. I
= 10Ω; V
= 24A; V
100
F
50
50
C
G
GE
125
GE
60
60
= 15V
= 15V
T
J
T
= 175°C; L = 200µH; V
J
= 175°C; L = 200µH; V
1000
1000
100
100
10
45
40
35
30
25
20
15
10
10
Fig. 16 - Typ. Switching Time vs. R
5
1
Fig. 14 - Typ. Switching Time vs. I
10
Fig. 18 - Typ. Diode I
0
0
t F
td OFF
t R
IRGS/SL4062DPbF
t R
td OFF
25
25
td ON
20
T
J
CE
CE
td ON
= 175°C
50
50
= 400V, R
= 400V, I
R G (Ω)
R G (Ω)
I C (A)
30
RR
75
75
G
CE
vs. R
t F
= 10Ω; V
40
= 24A; V
100
100
G
C
G
GE
125
125
GE
50
= 15V
= 15V
5