IRG4PF50WDPBF International Rectifier, IRG4PF50WDPBF Datasheet
IRG4PF50WDPBF
Specifications of IRG4PF50WDPBF
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IRG4PF50WDPBF Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • ...
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IRG4PF50WD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) ...
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60% of rated 20 voltage 0.1 1000 ° 100 ...
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IRG4PF50WD Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL ...
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ies res gc 5000 oes ce C ies 4000 3000 2000 C oes 1000 C res Collector-to-Emitter ...
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IRG4PF50WD 16 5 150 C ° 720V 15V Collector Current (A) C Fig Typical Switching Losses vs. ...
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Fig Typical Reverse Recovery vs. di 1200 V = 200 125° 25°C J 900 I = 32A F I ...
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IRG4PF50WD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode ...
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Figure 18e. Macro Waveforms for 1000V 50V 600 0µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 18a's D.U. ...
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IRG4PF50WD Repetitive rating: V =20V; pulse width limited by maximum junction tem- GE perature (figure 20) V =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot. Case Outline and ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...