IRG7PH42UDPBF International Rectifier, IRG7PH42UDPBF Datasheet - Page 6

• Manufacturer Part Number: IRG7PH42UDPBF
• Description: IGBT 1200V 85A W/DIODE TO-247AC
• Manufacturer: International Rectifier

Specifications of IRG7PH42UDPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 30A
• Current - Collector (ic) (max): 85A
• Power - Max: 320W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Type: IGBT
• Dc Collector Current: 85A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 320W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Rohs Compliant: Yes
• Package: TO-247
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 85
• Ic @ 100c (a): 45
• Vce(on)@25c Typ (v): 1.70
• Vce(on)@25c Max (v): 2.00
• Ets Typ (mj): 3.29
• Ets Max (mj): 3.8
• Vf Typ: 2.00
• Pd @25c (w): 320
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRG7PH42UDPbF/IRG7PH42UD-EP
6
V
CC
50
40
30
20
10
40
35
30
25
20
= 600V; V
15
0
Fig. 19 - Typ. Diode I
Fig. 17 - Typ. Diode I
R G = 10Ω
R G = 5.0Ω
20
200
25
GE
T
J
400
= 15V; I
30
= 150°C
di F /dt (A/µs)
35
I F (A)
600
F
40
= 30A; T
RR
RR
800
45
vs. di
vs. I
3500
3000
2500
2000
1500
1000
R G = 47Ω
R G = 100Ω
500
50
1000 1200
F
F
J
/dt
15
= 150°C
55
Fig. 21 - Typ. Diode E
R G = 5.0 Ω
R G = 10 Ω
R G = 47Ω
R G = 100Ω
20
60
25
T
30
J
= 150°C
35
I F (A)
40
RR
45
9000
8000
7000
6000
5000
4000
3000
2000
vs. I
40
35
30
25
20
50
V
Fig. 20 - Typ. Diode Q
F
Fig. 18 - Typ. Diode I
0
CC
0
55
= 600V; V
100Ω
200
60
20
400
T
J
47Ω
= 150°C
GE
di F /dt (A/µs)
40
60A
600
R G (Ω)
= 15V; T
10Ω
800 1000 1200 1400
60
RR
30A
RR
5.0Ω
vs. R
vs. di
J
= 150°C
15A
80
G
F
/dt
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100