IRG7PH30K10PBF International Rectifier, IRG7PH30K10PBF Datasheet

IGBT N-CH 1200V 33A TO-247AC

IRG7PH30K10PBF

Manufacturer Part Number
IRG7PH30K10PBF
Description
IGBT N-CH 1200V 33A TO-247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRG7PH30K10PBF

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.35V @ 15V, 9A
Current - Collector (ic) (max)
33A
Power - Max
210W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
33A
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
175C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG7PH30K10PBF
Manufacturer:
International Rectifier
Quantity:
135
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
1
Features
• Low V
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 10 µS short Circuit SOA
• Square RBSOA
• 100% of the parts tested for I
• Positive V
• Tight Parameter Distribution
• Lead Free Package
Absolute Maximum Ratings
V
I
I
I
I
I
V
P
P
T
T
Thermal Resistance
R
R
R
INSULATED GATE BIPOLAR TRANSISTOR
C
C
NOMINAL
CM
LM
J
STG
CES
GE
D
D
θJC
θCS
θJA
Low V
@ T
@ T
@ T
@ T
(IGBT)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
CE (ON)
CE (ON)
CE (ON)
and Low Switching Losses
Trench IGBT Technology
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current Vge = 15V
Clamped Inductive Load Current Vge = 20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Temperature Co-Efficient
LM

Parameter
Parameter
f
G
n-channel
C
E
IRG7PH30K10PbF
Min.
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
Gate
G
10 lbf·in (1.1 N·m)
-55 to +175
t
Max.
Typ.
1200
0.24
SC
±30
210
110
–––
9.0
C
33
23
27
36
40
I
V
Collector
C
TO-247AC
CE(on)
= 23A, T
10µs, T
V
C
CES
G
Max.
typ. = 2.05V
C
0.70
–––
–––
= 1200V
E
J(max)
C
= 100°C
www.irf.com
Emitter
=175°C
Units
Units
E
06/23/09
°C/W
°C
W
V
A
V

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IRG7PH30K10PBF Summary of contents

Page 1

... Mounting Torque, 6- Screw Thermal Resistance R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) θJC R Thermal Resistance, Case-to-Sink (flat, greased surface) θCS R Thermal Resistance, Junction-to-Ambient (typical socket mount) θ n-channel Parameter Parameter f IRG7PH30K10PbF 1200V CES I = 23A 100° ≥ t 10µ J(max typ. = 2.05V ...

Page 2

... IRG7PH30K10PbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...

Page 3

... 18V 15V 12V 10V 8. Fig Typ. IGBT Output Characteristics IRG7PH30K10PbF 100 125 150 T C (°C) Fig Power Dissipation vs. Case Temperature 100 1000 V CE (V) Fig Reverse Bias SOA T = 175°C; V ...

Page 4

... IRG7PH30K10PbF (V) Fig Typ. IGBT Output Characteristics T = 175° 80µ (V) Fig Typical V vs 25° 25° 175° (V) Fig. 11- Typ. Transfer Characteristics V = 50V 10µ 18V VGE = 15V VGE = 12V VGE = 10V VGE = 18A 2000 1600 1200 800 400 175° 1000µH; V ...

Page 5

... V CE (V) Fig Typ. Capacitance vs 0V 1MHz GE www.irf.com 22Ω 15V T = 175° 1000µ 600V 9.0A 15V CE GE Cies Coes Cres 300 400 500 CE IRG7PH30K10PbF 1000 E ON 900 800 700 E OFF 600 (Ω) Fig Typ. Energy Loss vs 600V 9.0A (V) Fig vs. Short Circuit Time ...

Page 6

... IRG7PH30K10PbF 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case τ J τ J τ τ τ τ 1 τ τ τ τ Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Zthjc + Tc 0.0001 ...

Page 7

... Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.3 - S.C. SOA Circuit VCC R = DUT Rg Fig.C.T.5 - Resistive Load Circuit www.irf.com VCC DIODE CLAMP V CC ICM VCC G f orce IRG7PH30K10PbF L + DUT - Vclamped Rg Fig.C.T.2 - RBSOA Circuit L DUT / DRIVER Rg Fig.C.T.4 - Switching Loss Circuit rce 100K D1 22K 0.0075µ ...

Page 8

... IRG7PH30K10PbF 900 800 tf 700 600 500 400 300 5% V 200 CE 100 0 Eoff Loss -100 - time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T = 175°C using Fig. CT 700 18 16 600 14 500 12 400 10 90 300 6 200 100 -100 10 Fig. WF2 - Typ. Turn-on Loss Waveform ...

Page 9

... TO-247AC package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRG7PH30K10PbF 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & Data and specifications subject to change without notice. ...

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