IRG4IBC10UDPBF International Rectifier, IRG4IBC10UDPBF Datasheet

IGBT W/DIODE 600V 6.8A TO220FP

IRG4IBC10UDPBF

Manufacturer Part Number
IRG4IBC10UDPBF
Description
IGBT W/DIODE 600V 6.8A TO220FP
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4IBC10UDPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 5A
Current - Collector (ic) (max)
6.8A
Power - Max
25W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4IBC10UDPBF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
l
l
l
l
l
www.irf.com
Benefits
l
l
l
V
I
I
I
I
I
I
V
V
P
P
T
T
R
R
R
Wt
Absolute Maximum Ratings
Thermal Resistance
C
C
CM
LM
F
FM
J
STG
CES
ISOL
GE
D
D
@Tc = 100°C
θJC
θJC
θJA
@ T
@ T
UltraFast: Optimized for high operating up to
80 kHz in hard switching, >200 kHz in
resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
IGBT co-packaged with HEXFRED
soft recovery anti-parallel diodes for use in bridge
configurations
Industry standard TO-220 Full-Pak
Lead-Free
Generation 4 IGBTs offer highest efficiencies available
IGBTs optimized for specifica application conditions
HEXFRED
Minimized recovery characteristics require less/no
snubbing
@T
@T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
®
diodes optimized for performace with IGBTs
Collector-toEmitter Breakdown Voltage
Continuous Collector Current, V
Continuous Collector, V
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
rms Isolated Voltage, Terminal to case, t=1min
Gate-to-Emitter Voltage
Power Dissipation
Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
®
ultrafast, ultra-
Parameter
Parameter
GE
@ 15V
GE
d
@ 15V
d
G
n-channel
IRG4IBC10UDPbF
300 (0.063 in.) (1.6mm from case)
2.1 (0.075)
C
E
Typ.
–––
–––
–––
10lb
-55 to + 150
TO-220AB
x
in (1.1N
Max.
2500
600
6.8
3.9
3.9
±20
27
27
27
25
10
UltraFast Co-Pack IGBT
x
m)
Max.
–––
5.0
9.0
CE(on) typ.
65
GE
f (typ.)
CES
PD - 95603B
=
C
Units
Units
g (oz)
°C/W
°C
W
V
N
A
V
1

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IRG4IBC10UDPBF Summary of contents

Page 1

... R Junction-to-Case - Diode θJC R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com G ® ultrafast, ultra- n-channel Parameter @ 15V GE @ 15V Parameter PD - 95603B IRG4IBC10UDPbF UltraFast Co-Pack IGBT C CES CE(on) typ (typ.) TO-220AB Max. 600 6.8 3 3.9 27 2500 ± - 150 300 (0.063 in.) (1.6mm from case) ...

Page 2

IRG4IB10UDPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Gate Threshold Voltage Coefficient GE(th Forward Transconductance ...

Page 3

... 0 Collector-to-Emitter Voltage (V) CE www.irf.com 1 f, Frequency (KHz) RMS T = 150 15V GE 20µs PULSE WIDTH 10 IRG4IBC10UDPbF 10 100 PK 100 150 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage ( ...

Page 4

IRG4IB10UDPbF Case Temperature ( 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 (THERMAL RESPONSE) 0.01 0.00001 4 100 125 150 ° C) SINGLE PULSE 0.0001 ...

Page 5

... C ies 300 200 C oes 100 C res Collector-to-Emitter Voltage ( 480V 15V GE ° 5.0A C 0.25 0. Gate Resistance (Ohm) G www.irf.com f = 1MHz C SHORTED 100 80 90 100 IRG4IBC10UDPbF 400V 5. Total Gate Charge (nC Ohm 15V 480V CC 1 0.1 0.01 -60 -40 - 100 120 140 160 T , Junction Temperature ( ...

Page 6

IRG4IB10UDPbF 1.4 Ω Ohm 150 C ° 480V 1 15V GE 1.0 0.8 0.6 0.4 0.2 0 Collector-to-emitter Current ( 100 10 ...

Page 7

... V = 200V 125° 25°C J 160 4.0A F 120 100 di /dt - (A/µs) f www.irf.com 200V 125° 25° 1000 100 f 1000 V = 200V 125° 25° 8. 4.0A F 100 1000 100 f IRG4IBC10UDPbF 1000 di /dt - (A/µ 1000 di /dt - (A/µs) f (rec ...

Page 8

IRG4IB10UDPbF 430µF 80% of Vce LM on off(diode) rr 10% +Vg Vce 10% Ic Vcc 5% Vce tr td(on Same type device as +Vge D.U.T. D.U. d(on) r d(off) f GATE VOLTAGE D.U.T. +Vg DUT VOLTAGE ...

Page 9

... Figure 18e. Macro Waveforms for 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL Figure 18a's D.U.T. L 1000V IRG4IBC10UDPbF DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 Test Circuit L Figure 20. Pulsed Collector Current Test Circuit C 9 ...

Page 10

IRG4IB10UDPbF TO-220AB Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220AB Full-Pak Part Marking Information TO-220AB Full-Pak package is not recommended for Surface Mount Application. Notes:  Repetitive rating 20V, pulse width limited by max. junction temperature ...

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