IRG4IBC30WPBF International Rectifier, IRG4IBC30WPBF Datasheet

IGBT WARP 600V 17A TO220FP

IRG4IBC30WPBF

Manufacturer Part Number
IRG4IBC30WPBF
Description
IGBT WARP 600V 17A TO220FP
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4IBC30WPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 12A
Current - Collector (ic) (max)
17A
Power - Max
45W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4IBC30WPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4IBC30WPBF
Manufacturer:
IR
Quantity:
12 500
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Features
• 2.5kV, 60s insulation voltage
• Industry standard Isolated TO-220 Fullpak
• Lead-Free
Absolute Maximum Ratings
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
LM
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
CM
boost PFC topologies 150W and higher
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
www.irf.com
Supply and PFC (power factor correction)
Lower switching losses allow more cost-effective
Of particular benefit to single-ended converters and
Designed expressly for Switch-Mode Power
applications
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Low conduction losses and minimal minority-carrier
STG
θJA
CES
GE
ARV
D
D
J
θJC
outline
ndustry-benchmark switching losses improve
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case - IGBT
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
TM
G
IRG4IBC30WPbF
n-channel
300 (0.063 in. (1.6mm from case )
2.0 (0.07)
Typ.
–––
–––
C
E
10 lbf•in (1.1N•m)
-55 to + 150
TO-220 FULLP AK
Max.
± 20
600
180
8.4
17
92
92
45
18
CE(on) typ.
Max.
GE
–––
2.8
65
CES
=
C
Units
Units
g (oz)
°C/W
mJ
°C
V
A
V
1

Related parts for IRG4IBC30WPBF

IRG4IBC30WPBF Summary of contents

Page 1

... Soldering Temperature, for 10 seconds Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case - IGBT θJC R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4IBC30WPbF n-channel TM TO-220 FULLP AK - 150 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– ––– ...

Page 2

... IRG4IBC30WPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage „ (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance … fe CES I Gate-to-Emitter Leakage Current ...

Page 3

... Gate drive as specified Power Dissipation = 10. Frequency (kHz) of fundamental; for triangular wave, I=I RMS 100 T = 150 15V 0.1 5.0 10 Fig Typical Transfer Characteristics IRG4IBC30WPbF Triangular wave: Clamp voltage: 80% of rated 100 1000 ) PK ° ° 50V CC 5µs PULSE WIDTH 6.0 7.0 8 ...

Page 4

... IRG4IBC30WPbF 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 15V PULSE WIDTH 2.5 2.0 1.5 125 150 -60 -40 -20 ° ...

Page 5

... Gate Resistance (Ohm Fig Typical Switching Losses vs. Gate Resistance www.irf.com 1MHz = SHORTED ies C oes C res 10 100 10 0.1 0. (Ω) Fig Typical Switching Losses vs. IRG4IBC30WPbF V = 400V 12A Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Emitter Voltage Ω Ohm 15V 480V -60 -40 -20 0 ...

Page 6

... IRG4IBC30WPbF 1.5 Ω Ohm 150 C ° 480V 15V GE 1.0 0.5 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 1000 100 20V = 125°C SAFE OPERATING AREA 10 100 , Collector-to-Emitter Voltage (V) CE Fig Turn-Off SOA www.irf.com 1000 ...

Page 7

... V C 90% 10 d(on) www.irf.com D.U. D.U.T. Driver 90% t d(off t=5µ off off IRG4IBC30WPbF 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Driver same type as D.U.T 480V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4IBC30WPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information "K " Note: "P" in assembly line position indicates "Lead-Free" IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 Visit us at www.irf.com for sales contact information. ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords