IRG4BC20MD-SPBF International Rectifier, IRG4BC20MD-SPBF Datasheet

IGBT N-CH W/DIODE 600V 18A D2PAK

IRG4BC20MD-SPBF

Manufacturer Part Number
IRG4BC20MD-SPBF
Description
IGBT N-CH W/DIODE 600V 18A D2PAK
Manufacturer
International Rectifier
Datasheets
1.IRG4BC20MD-S.pdf (12 pages)
2.IRG4BC20MD-SPBF.pdf (11 pages)

Specifications of IRG4BC20MD-SPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 11A
Current - Collector (ic) (max)
18A
Power - Max
60W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Dc Collector Current
18A
Collector Emitter Voltage Vces
2.1V
Power Dissipation Pd
60W
Collector Emitter Voltage V(br)ceo
600V
Collector Emitter Saturation Voltage Vce(sat)
2.1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4BC20MD-SPBF
Benefits
Absolute Maximum Ratings
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• Rugged: 10µsec short circuit capable at V
• Low V
• IGBT Co-packaged with ultra-soft-recovery
• Industry standard D
• Lead-Free
• Offers highest efficiency and short circuit
• Provides best efficiency for the mid range frequency
• Optimized for Appliance Motor Drives, Industrial (Short
• High noise immune "Positive Only" gate drive-
• For Low EMI designs- requires little or no snubbing
• Single Package switch for bridge circuit applications
• Compatible with high voltage Gate Driver IC's
• Allows simpler gate drive
R
R
R
R
Wt
V
I
I
I
I
I
t
I
V
P
P
T
T
www.irf.com
(4 to 10kHz)
C
C
CM
LM
F
sc
FM
Circuit Proof) Drives and Intermediate Frequency
Negative bias gate drive not necessary
Range Drives
antiparallel diode
capability for intermediate applications
CES
GE
D
D
J
STG
θJC
θJC
θCS
θJA
@ T
@ T
@ T
@ T
@ T
C
C
C
CE(on)
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
for 4 to 10kHz applications
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Short Circuit Withstand Time
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
2
Pak package
Parameter
Parameter
GS
=15V
IRG4BC20MD-SPbF
G
n-channel
Min.
------
------
------
------
-----
300 (0.063 in. (1.6mm) from case)
C
E
10 lbf•in (1.1 N•m)
-55 to +150
D
2 (0.07)
Max.
± 20
600
7.0
2
Typ.
------
------
18
11
36
36
10
36
60
24
0.50
-----
Pak
Short Circuit Rated
@V
V
CE(on) typ.
V
GE
CES
= 15V, I
Max.
------
------
2.1
2.5
80
= 600V
Fast IGBT
= 1.85V
01/19/10
C
= 11A
Units
Units
g (oz)
°C/W
W
µs
°C
V
A
A
V
1

Related parts for IRG4BC20MD-SPBF

Image
Part Number
Description
Manufacturer
Datasheet
Request R
80CNQ045
Part Number:
80CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
80CNQ045.pdf (6 pages)
82CNQ030
Part Number:
82CNQ030
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
82CNQ030.pdf (6 pages)
85CNQ015
Part Number:
85CNQ015
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
85CNQ015.pdf (8 pages)
200CNQ035
Part Number:
200CNQ035
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
200CNQ035.pdf (5 pages)
120NQ045
Part Number:
120NQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
120NQ035R.pdf (5 pages)
400CNQ045
Part Number:
400CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
400CNQ045.pdf (4 pages)
63CNQ100
Part Number:
63CNQ100
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
63CNQ100.pdf (2 pages)
123NQ080
Part Number:
123NQ080
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
123NQ080.pdf (5 pages)
301CNQ045
Part Number:
301CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
301CNQ045.pdf (5 pages)
125NQ015
Part Number:
125NQ015
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
125NQ015.pdf (4 pages)
301CNQ040
Part Number:
301CNQ040
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
301CNQ045.pdf (5 pages)
123NQ100
Part Number:
123NQ100
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
123NQ080.pdf (5 pages)
241NQ045
Part Number:
241NQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
241NQ045.pdf (5 pages)
181NQ045
Part Number:
181NQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
181NQ045.pdf (4 pages)
182NQ030
Part Number:
182NQ030
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
182NQ030.pdf (4 pages)

IRG4BC20MD-SPBF Summary of contents

Page 1

... Thermal Resistance Parameter R Junction-to-Case - IGBT θJC R Junction-to-Case - Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4BC20MD-SPbF C =15V n-channel D -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Min. ------ ------ ------ ----- ------ 2 (0 ...

Page 2

Parameter V Collector-to-Emitter Breakdown Voltageƒ 600 (BR)CES Temperature Coeff. of Breakdown Voltage ---- ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ---- ∆ ∆ GE(th) J ...

Page 3

Ideal diodes 0.0 0.1 100 150° 25° 15V 20µs PULSE WIDTH 0.1 0.1 1 Collector-to-Emitter Voltage (V) www.irf.com 1 ...

Page 4

T , Case Temperature ( 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 4 15V ...

Page 5

1MHz ies res oes ce gc 600 C ies 400 200 C oes C res 0 ...

Page 6

50Ω 150° 15V 8 480V 6.0 4.0 2.0 0 Collector Current (A) 100 10 1 0.1 0.4 6 100 ...

Page 7

V = 200V 125° 25° 4. 100 di /dt - (A/µs) f 500 V = 200V 125° 25°C ...

Page 8

Same type device as D.U.T. 430µF 80% of Vce D.U. off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on d(on +Vge 10% ...

Page 9

Figure 18e. L 1000V 50V 6000µF 100V Figure 19. www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT D.U. VCC Figure 20. VCC ...

Page 10

Dimensions are shown in millimeters (inches DIU@SI6UDPI6G S@8UD D@S GPBP 6TT@H7G` GPUÃ8P9@ 10 Q6SUÃIVH7@S $"T 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69 S@@ QSP9V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ www.irf.com ...

Page 11

Notes: Repetitive rating: V =20V; pulse width limited by maximum junction tem- GE perature (figure 20) ‚V =80%( =20V, L=10µ CES GE ƒPulse width ≤ 80µs; duty factor ≤ 0.1%. „Pulse width 5.0µs, single shot. 2 ...

Related keywords