IRG4IBC20UDPBF International Rectifier, IRG4IBC20UDPBF Datasheet - Page 3

• Manufacturer Part Number: IRG4IBC20UDPBF
• Description: IGBT W/DIODE 600V 11.4A TO220FP
• Manufacturer: International Rectifier

Specifications of IRG4IBC20UDPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 6.5A
• Current - Collector (ic) (max): 11.4A
• Power - Max: 34W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: *IRG4IBC20UDPBF

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10.0
8.0
6.0
4.0
2.0
0.0
100
Fig. 2 - Typical Output Characteristics
0.1
10
1
0.1
0.1
V
CE
Square wave:
, Collector-to-Emitter Voltage (V)
60% of rated
Ideal diodes
I
voltage
1
T = 25°C
Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
J
GE
= 15V
(Load Current = I
T = 150°C
1
J
A
10
f, Frequency (KHz)
RMS
of fundamental)
100
0.1
10
Fig. 3 - Typical Transfer Characteristics
1
4
V
GE
T = 150°C
10
J
, Gate-to-Emitter Voltage (V)
6
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation =
T = 25°C
J
sink
J
= 90°C
8
V
5µs PULSE WIDTH
CC
= 10V
10
W
100
3
12
A