IRG4IBC30SPBF International Rectifier, IRG4IBC30SPBF Datasheet
IRG4IBC30SPBF
Specifications of IRG4IBC30SPBF
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IRG4IBC30SPBF Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR Features Features Features Features Features • Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry standard ...
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IRG4IBC30S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th ...
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Fig Typical Load Current vs. Frequency 100 150 20µs PULSE WIDTH ...
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IRG4IBC30S 100 Junction Temperature (°C) Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE ...
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ies C res C oes 1500 1000 500 Collector-to-Emitter Voltage (V) CE Fig Typical Capacitance vs. Collector-to-Emitter Voltage 3. 480V 15V GE ° ...
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IRG4IBC30S 15 23Ohm 150 C ° 480V 15V 12.0 GE 9.0 6.0 3.0 0 Collector-to-emitter Current (A) C Fig Typical ...
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L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth ...
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IRG4IBC30S TO-220 Full-Pak Package Outline (. ø (. (. (. ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...