IRGB4059DPBF International Rectifier, IRGB4059DPBF Datasheet - Page 2

• Manufacturer Part Number: IRGB4059DPBF
• Description: IGBT ULT FAST DIO 600V TO-220AB
• Manufacturer: International Rectifier

Specifications of IRGB4059DPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 4A
• Current - Collector (ic) (max): 8A
• Power - Max: 56W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 56W
• Collector Emitter Voltage V(br)ceo: 600V
• No. Of Pins: 3
• C-e Breakdown Voltage: 2.2V
• Collector Emitter Saturation Voltage Vce(sat): 2.05V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRGB4059DPbF
Notes:

‚
ƒ
„
V
∆V
V
V
∆V
gfe
I
V
I
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
SCSOA
Erec
trr
Irr
Electrical Characteristics @ T
Switching Characteristics @ T
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
(BR)CES
CE(on)
GE(th)
FM
on
off
total
on
off
total
ies
oes
res
V
g
ge
gc
Pulse width limited by max. junction temperature.
(BR)CES
GE(th)
2
CC
θ
= 80% (V
/∆TJ
/∆T
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuir Safe Operating Area
Reverse recovery energy of the diode
Diode Reverse recovery time
Peak Reverse Recovery Current
CES
), V
J
GE
= 15V, L = 100 µH, R
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 100 Ω.
(BR)CES
Min. Typ. Max. Units
Min. Typ. Max. Units
600
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
FULL SQUARE
1.75
2.15
2.20
1.60
1.30
280
110
120
210
240
145
0.3
-18
2.0
35
75
25
10
65
15
90
20
15
85
35
25
10
55
11
—
—
1
9
2
4
2.05
2.30
±100
118
196
6.5
—
—
—
—
—
—
25
—
—
13
77
33
14
75
20
—
—
—
—
—
—
—
—
—
—
3
6
mV/°C V
V/°C V
µA
µA
nA
nC
µJ
ns
µJ
ns
pF
µs
µJ
ns
V
V
V
S
V
A
Energy losses include tail and diode reverse recovery
R
Energy losses include tail and diode reverse recovery
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
I
R
I
R
T
I
I
R
T
V
V
f = 1Mhz
T
Rg = 100Ω, V
V
R
T
V
V
C
C
C
F
F
C
C
C
C
C
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
CC
CC
CC
CC
GE
G
G
G
G
G
= 4A
= 4A, T
= 4A, V
= 4A, V
= 4A, V
= 4A
= 4A, V
= 4A, V
= 4A, V
= 4A, V
= 25°C
= 175°C
= 175°C, I
= 175
= 100Ω, L=1mH, L
= 100Ω, L=1mH, L
= 100Ω, L=1mH, L
= 100Ω, L=1mH, L
= 100Ω, V
= 0V,I
= 0V, I
= V
= V
= 50V, I
= 0V,V
= 0v, V
= ± 20 V
= 400V
= 15V
= 0V
= 30V
= 480V, Vp =600V
= 400V, Vp =600V
= 400V, I
= 15V, Rg = 100Ω, L=1mH, L
Conditions
GE
GE
o
C
J
GE
GE
GE
, I
, I
CC
CC
CC
CC
c
c
= 175°C
CE
CE
=100 µA
C
C
= 250 µA ( 25 -175
C
= 15V, T
= 15V, T
= 15V, T
= 400V, V
= 400V
= 400V, V
= 400V
C
F
= 100 µA
= 250 µA ( 25 -175
= 600V
GE
GE
= 4A, PW =80µs
= 600V, T
= 16A
= 4A
= +15V to 0V
= +15V to 0V
Conditions
J
J
J
S
S
S
S
GE
GE
= 25°C
= 150°C
= 175°C
= 150nH, T
= 150nH
= 150nH, T
= 150nH
J
=175°C
= 15V
= 15V
o
C )
o
S
C )
J
J
=150nH
= 25°C
= 175°C
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9,10,11,12
WF1,WF2
WF1,WF2
17,18,19
22, CT3
Ref.Fig
5,6,7,9,
Ref.Fig
10 ,11
13,15
14,16
20,21
WF4
WF3
CT6
CT1
CT4
CT4
CT4
CT4
CT2
24
22
8
4