IRGIB6B60KDPBF International Rectifier, IRGIB6B60KDPBF Datasheet
IRGIB6B60KDPBF
Specifications of IRGIB6B60KDPBF
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IRGIB6B60KDPBF Summary of contents
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... R Junction-to-Case- Diode θJC R Case-to-Sink, flat, greased surface θCS Junction-to-Ambient, typical socket mount R θJA Weight Wt www.irf.com IRGIB6B60KDPbF G n-channel Parameter 300 (0.063 in. (1.6mm) from case) Parameter Min. ––– ––– ––– ––– ––– PD-95321 ...
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... IRGIB6B60KDPbF Electrical Characteristics @ T J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Threshold Voltage temp. coefficient GE(th) J gfe Forward Transconductance I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... T C (°C) Fig Maximum DC Collector Current vs. Case Temperature 100 10 1 0.1 0. 100 V CE (V) Fig Forward SOA T = 25°C; T 175°C ≤ www.irf.com IRGIB6B60KDPbF Fig Power Dissipation vs. Case 100 10 µs 100 µs 10 1ms DC 1 1000 10000 10 ...
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... IRGIB6B60KDPbF 18V VGE = 15V 16 VGE = 12V 14 VGE = 10V VGE = 8. (V) Fig Typ. IGBT Output Characteristics T = -40° 80µ 18V VGE = 15V 16 VGE = 12V 14 VGE = 10V VGE = 8. (V) Fig Typ. IGBT Output Characteristics T = 150° 80µ Fig Typ. IGBT Output Characteristics 30 25 ...
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... 3. 5. 10A (V) Fig Typical -40° 3. 5. 10A (V) Fig Typical 150°C J www.irf.com IRGIB6B60KDPbF Fig Typical V vs 150° Fig Typ. Transfer Characteristics 10A (V) vs 25° 25° 150° 25° ( 50V 10µ ...
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... IRGIB6B60KDPbF 700 600 E ON 500 400 300 200 100 (A) Fig Typ. Energy Loss vs 150°C; L=1.4mH 100Ω 15V G GE 250 E OFF 200 150 100 100 Ω ) Fig Typ. Energy Loss vs 150°C; L=1.4mH 5.0A 15V 1000 td OFF 100 E OFF Fig Typ. Switching Time vs. I ...
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... I F (A) Fig Typical Diode 150° 200 400 600 di F /dt (A/µs) Fig. 19- Typical Diode 400V 15V 5.0A 150° www.irf.com IRGIB6B60KDPbF Fig Typical Diode I vs 1200 1000 800 600 400 200 0 0 800 1000 Fig Typical Diode Q vs 400V 100 150 200 Ω ...
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... IRGIB6B60KDPbF 300 250 200 150 100 50 1000 100 (V) Fig. 22- Typ. Capacitance vs 0V 1MHz Ω 47 Ω 100 Ω 150 Ω (A) Fig Typical Diode E vs 150° Cies 12 10 Coes 8 Cres 100 Fig Typical Gate Charge vs 300V 400V Total Gate Charge (nC 5.0A 600µH CE www ...
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... Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.20 1 0.10 0.05 0.02 0.1 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com IRGIB6B60KDPbF τ J τ J τ τ 1 τ 2 τ Ci= τi/Ri ...
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... IRGIB6B60KDPbF DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Driver DUT Fig.C.T.3 - S.C.SOA Circuit 10 L VCC diode clamp / 360V DUT Rg Fig.C.T.5 - Resistive Load Circuit L DUT 480V Rg Fig.C.T.2 - RBSOA Circuit DUT DUT / DRIVER Rg Fig.C.T.4 - Switching Loss Circuit VCC www.irf.com VCC ...
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... Peak -250 I Peak RR -300 -350 -400 -450 -0.06 0.04 0.14 time (µS) Fig. WF3- Typ. Diode Recovery Waveform @ T = 150°C using Fig. CT.4 J www.irf.com IRGIB6B60KDPbF 9 500 8 400 7 6 300 5 4 200 3 100 -100 0.80 16.00 Fig. WF2- Typ. Turn-on Loss Waveform ...
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... IRGIB6B60KDPbF Package Outline Dimensions are shown in millimeters (inches) 10.60 (.417) 10.40 (.409) 16.00 (.630) 15.80 (.622) 1.15 (.045) MIN 13.70 (.540) 13.50 (.530) 0.90 (.035) 1.40 (.055) 3X 0.70 (.028) 3X 1.05 (.042) 0.25 (.010) 2.54 (.100) 2X @Y6HQG@) UCDTÃDTÃ6IÃDSAD'#BÃ ...