IRG4BC30FDPBF International Rectifier, IRG4BC30FDPBF Datasheet

IGBT W/DIODE 600V 31A TO220AB

IRG4BC30FDPBF

Manufacturer Part Number
IRG4BC30FDPBF
Description
IGBT W/DIODE 600V 31A TO220AB
Manufacturer
International Rectifier
Datasheets
1.IRG4BC30FDPBF.pdf (10 pages)
2.IRG4BC30FDPBF.pdf (11 pages)
3.IRG4BC30FDPBF.pdf (11 pages)

Specifications of IRG4BC30FDPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 17A
Current - Collector (ic) (max)
31A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
31A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
100W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Package
TO-220AB
Circuit
Co-Pack
Switching
Hard
Switching Speed
FAST 1-8 kHz
Vces (v)
600
Ic @ 25c (a)
31
Ic @ 100c (a)
17
Vce(on)@25c Typ (v)
1.59
Vce(on)@25c Max (v)
1.80
Ets Typ (mj)
2.02
Ets Max (mj)
3.9
Qrr Typ Nc 25c
80
Qrr Max Nc 25c
180
Vf Typ
1.40
Pd @25c (w)
100
Environmental Options
PbF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
*IRG4BC30FDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRG4BC30FDPBF
Manufacturer:
XILINX
Quantity:
101
Features
Features
Features
Features
Features
Benefits
Absolute Maximum Ratings
Thermal Resistance
• Generation -4 IGBT's offer highest efficiencies
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
• Designed to be a "drop-in" replacement for equivalent
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• Fast: Optimized for medium operating
• Generation 4 IGBT design provides tighter
• IGBT co-packaged with HEXFRED
• Industry standard TO-220AB package
V
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Wt
www.irf.com
CM
LM
FM
IGBT's . Minimized recovery characteristics require
C
C
F
Generation 3
available
kHz in resonant mode).
parameter distribution and higher efficiency than
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
less/no snubbing
industry-standard Generation 3 IR IGBT's
J
STG
qJA
CES
GE
D
D
qJC
qJC
qCS
frequencies ( 1-5 kHz in hard switching, >20
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
TM
ultrafast,
G
n-cha nnel
Min.
------
------
------
------
-----
300 (0.063 in. (1.6mm) from case)
IRG4BC30FD
C
E
10 lbf•in (1.1 N•m)
-55 to +150
2 (0.07)
Max.
TO-220AB
± 20
120
120
120
100
600
Typ.
------
------
31
17
12
42
0.50
-----
Fast CoPack IGBT
@V
V
CE(on) typ.
V
GE
CES
= 15V, I
Max.
------
------
1.2
2.5
80
= 600V
PD -91451B
= 1.59V
C
= 17A
Units
Units
g (oz)
°C/W
°C
W
A
V
V
1
12/8/98

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IRG4BC30FDPBF Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter ...

Page 2

IRG4BC30FD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage ---- /DT DV (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) /DT Temperature Coeff. of Threshold Voltage ---- DV GE(th) ...

Page 3

0 25° 150° ...

Page 4

IRG4BC30FD ture (° Fig Maximum Collector Current vs. Case Temperature 0.2 ...

Page 5

Cies = Cge + Cgc + Cce Cres = Cce Coes = Cce + Cgc ies oes 4 0 ...

Page 6

IRG4BC30FD 8 150° 480V 15V G E 6.0 4.0 2.0 0 Collector-to-Emitter Current (A) C Fig Typical Switching ...

Page 7

I = 24A 12A 100 /µ Fig Typical Reverse Recovery vs. di 600 ...

Page 8

IRG4BC30FD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode ...

Page 9

F 100 V www.irf.com D.U. 480V IRG4BC30FD ...

Page 10

IRG4BC30FD Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE Pulse width £ 80µs; duty factor £ 0.1%. Pulse width 5.0µs, single shot. 10.54 (.415) ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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