IRG4BC30FDPBF International Rectifier, IRG4BC30FDPBF Datasheet
![IGBT W/DIODE 600V 31A TO220AB](/photos/5/40/54079/to-220ab_sml.jpg)
IRG4BC30FDPBF
Specifications of IRG4BC30FDPBF
Available stocks
Related parts for IRG4BC30FDPBF
IRG4BC30FDPBF Summary of contents
Page 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter ...
Page 2
IRG4BC30FD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage ---- /DT DV (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) /DT Temperature Coeff. of Threshold Voltage ---- DV GE(th) ...
Page 3
0 25° 150° ...
Page 4
IRG4BC30FD ture (° Fig Maximum Collector Current vs. Case Temperature 0.2 ...
Page 5
Cies = Cge + Cgc + Cce Cres = Cce Coes = Cce + Cgc ies oes 4 0 ...
Page 6
IRG4BC30FD 8 150° 480V 15V G E 6.0 4.0 2.0 0 Collector-to-Emitter Current (A) C Fig Typical Switching ...
Page 7
I = 24A 12A 100 /µ Fig Typical Reverse Recovery vs. di 600 ...
Page 8
IRG4BC30FD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode ...
Page 9
F 100 V www.irf.com D.U. 480V IRG4BC30FD ...
Page 10
IRG4BC30FD Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE Pulse width £ 80µs; duty factor £ 0.1%. Pulse width 5.0µs, single shot. 10.54 (.415) ...
Page 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...