IRG4PH30KDPBF International Rectifier, IRG4PH30KDPBF Datasheet
IRG4PH30KDPBF
Specifications of IRG4PH30KDPBF
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IRG4PH30KDPBF Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features • High short circuit rating optimized for motor control, t =10µ 720V , T = 125° 15V GE • ...
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IRG4PH30KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward ...
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rate d volta 0.1 Fig Typical Load Current vs. Frequency ...
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IRG4PH30KD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 ...
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1MHz ies res gc 1000 oes ies 800 600 400 C ...
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IRG4PH30KD 8.0 Ω Ohm 150 C ° 800V 15V GE 6.0 4.0 2.0 0 Collector Current (A) C Fig. ...
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5° ° /dt - (A/µ Fig. 14 ...
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IRG4PH30KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...
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Figure 18e 50V µ Figure 19. www.irf.com ...
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IRG4PH30KD Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...