IRGB20B60PD1PBF International Rectifier, IRGB20B60PD1PBF Datasheet - Page 2
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IRGB20B60PD1PBF
Manufacturer Part Number
IRGB20B60PD1PBF
Description
IGBT W/DIODE 600V 40A TO220AB
Manufacturer
International Rectifier
Type
Warpr
Specifications of IRGB20B60PD1PBF
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
215W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Capacitance, Gate
1560 pF
Current, Collector
40 A
Energy Rating
195 μJ
Package Type
TO-220AB
Polarity
N-Channel
Power Dissipation
215 W
Resistance, Thermal, Junction To Case
0.58 °C/W
Speed, Switching
60 to 150 kHz
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
2.05 V
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
40A
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
40A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
215W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Package
TO-220AB
Circuit
Co-Pack
Switching
Hard
Switching Speed
WARP 30-150 kHz
Vces (v)
600
Ic @ 25c (a)
40
Ic @ 100c (a)
22
Vce(on)@25c Typ (v)
2.50
Vce(on)@25c Max (v)
2.80
Ets Typ (mj)
0.195
Ets Max (mj)
0.285
Qrr Typ Nc 25c
40
Qrr Max Nc 25c
60
Vf Typ
1.50
Pd @25c (w)
215
Environmental Options
PbF and Leaded
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRGB20B60PD1PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRGB20B60PD1PBF
Manufacturer:
ST
Quantity:
3 000
Part Number:
IRGB20B60PD1PBF
Manufacturer:
IR
Quantity:
20 000
IRGB20B60PD1PbF
Notes:
∆V
∆V
Electrical Characteristics @ T
V
R
V
V
gfe
I
V
I
Switching Characteristics @ T
Qg
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
C
C
RBSOA
t
Q
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
(BR)CES
CE(on)
GE(th)
FM
on
off
total
on
off
total
G
ies
oes
res
oes
oes
gc
ge
rr
R
V
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06.
C
C
(BR)CES
GE(th)
2
CE(on)
CC
oes
oes
eff.
eff. (ER) Effective Output Capacitance (Energy Related)
= 80% (V
/∆TJ
eff. is a fixed capacitance that gives the same charging time as C
eff.(ER) is a fixed capacitance that stores the same energy as C
/∆T
typ. = equivalent on-resistance = V
J
CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Internal Gate Resistance
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Time Related)
Reverse Bias Safe Operating Area
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Peak Reverse Recovery Current
), V
GE
= 15V, L = 28µH, R
Parameter
Parameter
CE(on)
J
G
J
= 25°C (unless otherwise specified)
= 22Ω.
= 25°C (unless otherwise specified)
typ. / I
C
, where V
CE(on)
g
g
typ. = 2.05V and I
oes
oes
while V
while V
Min.
Min.
600
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
CE
CE
is rising from 0 to 80% V
is rising from 0 to 80% V
Typ.
Typ.
1560
0.32
2.05
2.50
2.65
3.30
100
195
115
165
150
315
125
4.3
4.0
-11
1.0
0.1
1.5
1.4
5.0
6.0
6.0
2.9
3.7
19
68
24
10
95
20
19
13
95
20
83
61
28
38
40
70
—
—
C
= 13A. I
Max. Units
Max. Units
2.35
2.80
3.00
3.70
±100
250
102
140
145
285
135
215
195
410
140
105
5.0
5.2
1.8
1.7
7.0
8.0
8.0
6.7
36
15
26
25
17
42
57
60
—
—
—
—
—
—
—
—
—
—
—
D
(FET Equivalent) is the equivalent MOSFET I
mV/°C V
V/°C V
mA V
µA
nA
nC
pF
nC
µJ
ns
µJ
ns
ns
Ω
V
V
V
S
V
A
CES
CES
V
1MHz, Open Collector
I
I
I
I
V
V
I
I
V
I
V
V
I
V
T
I
V
T
I
V
T
I
V
T
V
V
f = 1Mhz
V
T
V
Rg = 22Ω, V
T
T
T
T
T
T
C
C
C
C
I
F
F
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
J
.
GE
GE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
GE
GE
CC
GE
CC
= 4.0A, V
= 4.0A, V
.
= 13A, V
= 20A, V
= 13A, V
= 13A
= 13A, V
= 13A, V
= 13A, V
= 13A, V
= 20A, V
= 25°C
= 25°C
= 125°C
= 125°C
= 150°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 250µA
= V
= 50V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V, V
= 400V
= 15V
= +15V, R
= +15V, R
= +15V, R
= +15V, R
= 0V
= 30V
= 0V, V
= 480V, Vp =600V
Conditions
GE
, I
C
C
GE
GE
GE
CC
CC
CC
CC
GE
GE
C
CE
CE
CE
C
GE
Ã
GE
= 500µA
= 1mA (25°C-125°C)
C
= 1.0mA
Ã
= 15V
= 15V
= 15V, T
= 40A, PW = 80µs
= 390V
= 390V
= 390V
= 390V
I
di/dt = 200A/µs
I
di/dt = 200A/µs
I
di/dt = 200A/µs
= 15V, T
= 0V
CE
= 600V
= 600V, T
Conditions
G
G
G
G
= 0V to 480V
= 80A
F
F
F
= 0V, T
= +15V to 0V
= 4.0A, V
= 4.0A, V
= 4.0A, V
= 10Ω, L = 200µH
= 10Ω, L = 200µH
= 10Ω, L = 200µH
= 10Ω, L = 200µH
= 0V
J
J
J
= 125°C
= 125°C
= 125°C
J
R
R
R
= 125°C
= 200V,
= 200V,
= 200V,
D
rating @ 25°C for
Ref.Fig
WF1,WF2
WF1,WF2
19,20,21,22
4, 5,6,8,9
Ref.Fig
11,13
12,14
7,8,9
CT1
CT3
CT3
CT3
CT3
CT2
CT5
10
17
16
15
19
21
3