IRGIB15B60KD1P International Rectifier, IRGIB15B60KD1P Datasheet - Page 11

• Manufacturer Part Number: IRGIB15B60KD1P
• Description: IGBT ULT FAST DIO 600V TO-220FP
• Manufacturer: International Rectifier

Specifications of IRGIB15B60KD1P

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 19A
• Power - Max: 52W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 19A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Pd: 52W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +175°C
• Rohs Compliant: Yes
• No. Of Pins: 3
• Rise Time: 35ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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-100
600
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100
Fig. WF1- Typ. Turn-off Loss Waveform
-100
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100
Fig. WF3- Typ. Diode Recovery Waveform
0
0.1
0
0.10
@ T
Peak
@ T
I
RR
J
= 150°C using Fig. CT.4
0.20
J
0.3
= 150°C using Fig. CT.4
tf
time (µS)
time(µs)
Q
0.30
Eoff Loss
RR
5% V
0.5
90% I
t
CE
RR
5% I
0.40
CE
Peak
10%
IRR
CE
0.7
0.50
20
15
10
5
0
-5
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-15
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-25
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30
25
20
15
10
5
0
-5
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800
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50
Fig. WF2- Typ. Turn-on Loss Waveform
0
0
0.2
0
IRGIB15B60KD1P
@ T
Fig. WF4- Typ. S.C Waveform
@ T
10
J
tr
= 150°C using Fig. CT.4
C
= 150°C using Fig. CT.3
Time (uS)
20
time (µs)
0.4
30
90% test current
10% test current
TEST CURRENT
Eon Loss
40
5% V
CE
50
0.6
400
350
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50
0
-50
40
35
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0
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