IRG4PC30KDPBF International Rectifier, IRG4PC30KDPBF Datasheet - Page 2

IGBT W/DIODE 600V 28A TO247AC

IRG4PC30KDPBF

Manufacturer Part Number
IRG4PC30KDPBF
Description
IGBT W/DIODE 600V 28A TO247AC
Manufacturer
International Rectifier
Datasheets

Specifications of IRG4PC30KDPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 16A
Current - Collector (ic) (max)
28A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
28A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
28A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
100W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4PC30KDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PC30KDPBF
Manufacturer:
ON
Quantity:
3 000
IRG4PC30KD
Switching Characteristics @ T
Electrical Characteristics @ T
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
sc
d(on)
r
d(off)
f
rr
rr
V
E
V
fe
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
ies
oes
res
g
ge
gc
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
5.4
10
0.54
2.21
2.88
2.36
0.60
0.58
1.18
1.69
160
210
160
920
110
220
180
160
-12
8.1
1.4
1.3
3.5
5.6
67
11
25
60
42
80
58
42
13
27
42
80
80
2500
±100
250
100
250
120
120
180
600
2.7
6.0
1.7
1.6
1.6
6.0
16
37
60
10
— mV/°C V
V/°C
A/µs
µA
nA
mJ
mJ
nC
nH
nC
ns
µs
pF
V
V
S
V
ns
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,14
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
CC
GE
GE
GE
CC
= 16A, T
= 12A, T
= 16A, V
= 16A, V
= 16A
= 28A
= 12A
= 16A
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 360V, T
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
C
C
See Fig.
See Fig.
= 150°C
= 150°C
Conditions
Conditions
See Fig.
See Fig.
= 250µA
= 1.0mA
G
G
G
C
= 250µA
= 250µA
J
= 480V
= 480V
= 600V
= 600V, T
= 16A
= 23
= 125°C
= 10 , V
= 23
14
15
17
16
See Fig.8
See Fig. 7
www.irf.com
See Fig. 11,14
V
See Fig. 2, 5
See Fig. 13
di/dt = 200Aµs
V
J
CPK
GE
R
I
= 150°C
F
= 200V
= 12A
= 15V
< 500V

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