IRG7PH35UPBF International Rectifier, IRG7PH35UPBF Datasheet - Page 6

• Manufacturer Part Number: IRG7PH35UPBF
• Description: IGBT N-CH 1200V 55A TO-247AC
• Manufacturer: International Rectifier

Specifications of IRG7PH35UPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 20A
• Current - Collector (ic) (max): 55A
• Power - Max: 210W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Type: IGBT
• Dc Collector Current: 55A
• Collector Emitter Voltage Vces: 1.9V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-247AC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRG7PH35UPbF/IRG7PH35U-EP
6
Fig. 18 - Typical Gate Charge vs. V
16
14
12
10
8
6
4
2
0
0
0.001
0.01
0.1
1
1E-006
I
CE
20
Q G , Total Gate Charge (nC)
= 20A; L = 2.4mH
V CES = 600V
V CES = 400V
Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case
D = 0.50
40
0.10
0.02
0.20
0.05
0.01
SINGLE PULSE
( THERMAL RESPONSE )
60
1E-005
80
GE
100
t 1 , Rectangular Pulse Duration (sec)
0.0001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
i/Ri
R
1
R
1
τ
2
0.001
R
τ
2
2
R
1.0
0.8
0.6
0.4
2
25
Fig. 19 - Typical Gate Threshold Voltage
R
τ
(Normalized) vs. Junction Temperature
3
3
R
τ
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
50
τ
R
4
τ
4
R
4
4
T J , Temperature (°C)
τ
C
τ
75
Ri (°C/W)
0.01
0.017
0.218
0.299
0.177
100
0.000013
0.000141
0.002184
0.013107
τi (sec)
125
I C = 600μA
150
0.1
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