IRGPS40B120UDP International Rectifier, IRGPS40B120UDP Datasheet - Page 2

• Manufacturer Part Number: IRGPS40B120UDP
• Description: IGBT W/DIODE 1200V 80A SUPER247
• Manufacturer: International Rectifier

Specifications of IRGPS40B120UDP

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Power - Max: 595W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGPS40B120UDP

Electrical Characteristics @ T
IRGPS40B120UDP
Switching Characteristics @ T
SCSOA
V
∆V
V
V
∆
g
I
V
I
RBSOA
Qg
Qge
Q
E
E
E
E
E
E
t
t
t
t
C
C
C
Erec
t
I
CES
GES
d(on)
r
d(off)
f
rr
rr
V
fe
(BR)CES
CE(on)
GE(th)
FM
2
on
off
tot
on
off
tot
ies
oes
res
gc
(BR)CES
GE(th)
/
∆
/∆T
T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
Short Circuit Safe Operting Area
Reverse Bias Safe Operting Area
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
1200 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.40 –––
––– 3.12 3.40
––– 3.39 3.70
––– 3.88 4.30
––– 4.24 4.70
––– 30.5 –––
–––
–––
––– 2.03 2.40
––– 2.17 2.60
––– 2.26 2.68
––– 2.46 2.95
–––
–––
–––
–––
––– 1400 1750
––– 1650 2050
––– 3050 3800
––– 1950 2300
––– 2200 2950
––– 4150 5250
–––
–––
–––
–––
––– 4300 –––
–––
–––
––– 3346 –––
–––
–––
4.0
10
FULL SQUARE
–––
420 1200
––– ±100
340
165
332
330
160
180
5.0
-12
–––
40
76
39
25
50
–––
––– mV/°C V
500
510
248
365
–––
–––
–––
–––
6.0
–––
60
99
55
33
V/°C
µA
nA
nC
V
V
S
V
pF
µJ
µJ
ns
µJ
ns
µs
A
V
V
I
I
I
I
V
V
V
V
I
I
I
I
V
I
V
V
I
V
Ls = 150nH
Energy losses include "tail" and
diode reverse recovery.
I
V
Ls = 150nH, T
V
V
f = 1.0MHz
T
V
R
T
V
R
T
V
V
C
C
C
C
C
C
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
J
J
J
CC
GE
GE
GE
GE
CC
CC
CC
CC
GE
G
G
= 40A
= 50A
= 40A, T
= 50A, T
= 40A
= 50A
= 40A, T
= 50A, T
= 40A
= 40A, V
= 40A, V
= 125°C
= 150°C, I
= 150°C, Vp =1200V
= 4.7Ω
= 4.7Ω
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±20V
= 600V
= 15V
= 15V,R
= 15V, R
= 0V
= 30V
= 1000V, V
= 900V, V
= 600V, I
= 15V,R
GE
GE
, I
, I
J
J
J
J
C
C
CC
CC
CE
CE
C
C
C
= 125°C
= 125°C
= 125°C
= 125°C
Conditions
Conditions
G
G
= 500µA
= 1.0mA, (25°C-125°C)
C
G
F
= 250µA
= 1.0mA, (25°C-125°C)
= 40A, PW=80µs
= 600V
= 600V
J
= 4.7Ω, L =200µH
GE
= 4.7Ω, Ls = 150nH
= 1200V
= 1200V, T
= 160A, Vp =1200V
= 4.7Ω L =200µH
= 60A, L =200µH
= 125°C
GE
= +15V to 0V,
= +15V to 0V
T
T
J
J
www.irf.com
V
= 25°C
= 125°C
GE
J
= 125°C
= 15V
CT4,WF3
Ref.Fig.
Ref.Fig.
17,18,19
14, 16
9,10
11 ,12
20, 21
13,15
WF1
WF2
WF4
5, 6
7, 9
10
11
CT4
CT3
CT1
WF1
WF2
CT2
CT4
23
22
8
4