IRG7PH46UDPBF International Rectifier, IRG7PH46UDPBF Datasheet - Page 2

IGBT N-CH 1200V TO-247AC

IRG7PH46UDPBF

Manufacturer Part Number
IRG7PH46UDPBF
Description
IGBT N-CH 1200V TO-247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRG7PH46UDPBF

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 40A
Current - Collector (ic) (max)
40A
Power - Max
390W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG7PH46UDPBF
Manufacturer:
SANKEN
Quantity:
2 000
IRG7PH46UDPbF/IRG7PH46UD-EP
Notes:

ƒ
Electrical Characteristics @ T
V
∆V
V
V
∆V
gfe
I
V
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
Erec
t
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
(BR)CES
CE(on)
GE(th)
FM
on
off
total
on
off
total
ies
oes
res
g
ge
gc
(BR)CES
GE(th)
V
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
R
Values influenced by parasitic L and C of the test circuit.
2
CC
θ
is measured at T
/∆TJ
= 80% (V
/∆T
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
CES
), V
J
GE
of approximately 90°C.
= 20V, L = 200µH, R
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
=
10Ω.
(BR)CES
safely.
Min.
1200
Min.
3.0
FULL SQUARE
Typ.
Typ.
2610
1845
4455
3790
2905
6695
4820
1130
220
410
480
200
150
110
140
1.2
1.7
2.0
-13
1.5
2.0
3.1
3.0
50
30
85
45
40
45
40
40
40
Max. Units
Max. Units
3515
2725
6240
±200
100
320
130
450
2.0
6.0
4.8
50
60
60
60
mV/°C V
V/°C V
mA
nC
µA
nA
pF
µJ
ns
µJ
ns
µJ
ns
V
V
V
S
V
A
Energy losses include tail & diode reverse recovery
Energy losses include tail & diode reverse recovery
V
I
I
V
V
V
V
I
I
V
I
V
V
I
R
I
R
V
V
f = 1.0Mhz
T
V
Rg = 10Ω, V
T
V
Rg = 10Ω, L =1.0mH
C
C
F
F
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
CC
J
CC
J
CC
G
G
= 40A
= 40A, T
= 40A, V
= 40A, V
= 40A
= 40A, V
= 40A, V
=10Ω, L=200µH, T
= 150°C, I
= 150°C
= 10Ω, L = 200µH,T
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±30V
= 15V
= 600V
= 0V
= 30V
= 960V, Vp 1200V
= 600V, I
Conditions
GE
GE
d
, I
, I
J
C
C
GE
GE
CC
CC
C
C
CE
CE
C
= 150°C
GE
= 100µA
= 1.0mA (25°C-150°C)
C
= 1.6mA
= 1.6mA (25°C - 150°C)
F
= 15V, T
= 15V, T
= 40A, PW = 20µs
= 600V, V
= 600V, V
= 1200V
= 1200V, T
= 160A
= 40A
= +20V to 0V
Conditions
J
J
J
= 150°C
J
= 25°C
= 150°C
GE
GE
= 25°C
J
=15V
= 15V
= 150°C
g
g
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