IRG7PSH73K10PBF International Rectifier, IRG7PSH73K10PBF Datasheet - Page 6

• Manufacturer Part Number: IRG7PSH73K10PBF
• Description: IGBT N-CH 1200V 220A SUPER-247
• Manufacturer: International Rectifier

Specifications of IRG7PSH73K10PBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 75A
• Current - Collector (ic) (max): 220A
• Power - Max: 1150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super 247
• Transistor Type: IGBT
• Dc Collector Current: 220A
• Collector Emitter Voltage Vces: 2V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-247AA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRG7PSH73K10PbF
6
100000
10000
1000
100
0.0001
0.001
Fig. 18 - Typ. Capacitance vs. V
0.01
0.1
0
1E-006
1
Cres
20
D = 0.50
V
GE
0.05
0.01
0.20
0.10
0.02
= 0V; f = 1MHz
SINGLE PULSE
( THERMAL RESPONSE )
Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case
40
V CE (V)
Cies
Coes
1E-005
60
80
CE
t 1 , Rectangular Pulse Duration (sec)
100
0.0001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci τi/Ri
R
1
R
0.001
1
16
14
12
10
8
6
4
2
0
τ
2
Fig. 19- Typical Gate Charge vs. V
R
τ
2
2
0
R
2
R
τ
3
3
R
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
3
I
3
CE
Q G , Total Gate Charge (nC)
100
τ
C
= 75A; L = 330μH
τ
Ri (°C/W)
0.0309
0.0520
0.0471
0.01
200
0.000104
0.000868
0.003620
τi (sec)
400V
300
0.1
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600V
GE
400