IRG4BC20U International Rectifier, IRG4BC20U Datasheet
IRG4BC20U
Specifications of IRG4BC20U
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IRG4BC20U Summary of contents
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Features Features Features Features Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard ...
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Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage — /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. ...
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lta ...
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ase Tem perature (°C) C Fig Maximum Collector Current vs. Case Temperature ...
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° 0 0.6 0.4 0.2 0 ...
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L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth ...
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...