IRG4PH30KD International Rectifier, IRG4PH30KD Datasheet
IRG4PH30KD
Specifications of IRG4PH30KD
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IRG4PH30KD Summary of contents
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... Wt Weight www.irf.com G n-ch an nel TM ultrafast, 300 (0.063 in. (1.6mm) from case) Min. ––– ––– ––– ––– ––– PD- 91579A IRG4PH30KD Short Circuit Rated UltraFast IGBT 1200V CES = 3.10V V CE(on) typ 15V 10A TO-247AC Max ...
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... IRG4PH30KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... GE 20µs PULSE WIDTH Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 100 150 15V Fig Typical Transfer Characteristics IRG4PH30KD ° ° C sink riv ifie tio ° ° 50V CC 5µs PULSE WIDTH 8 ...
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... IRG4PH30KD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 5 15V PULSE WIDTH 4.5 4.0 3.5 3.0 2.5 2 ...
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... Fig Typical Switching Losses vs. Gate Resistance www.irf.com 400V CC C SHORTED I = 10A 100 0 Fig Typical Gate Charge vs. 100 0 -60 -40 -20 Fig Typical Switching Losses vs. IRG4PH30KD Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω = Ohm = 23 = 15V = 800V 100 120 140 160 ° Junction Temperature ( Junction Temperature ...
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... IRG4PH30KD 8.0 Ω Ohm 150 C ° 800V 15V GE 6.0 4.0 2.0 0 Collector Current (A) C Fig Typical Switching Losses vs. Collector Current Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 100 150° 125° 25° 0.0 2.0 4.0 6.0 F orward V oltage D rop - V ...
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... Fig Typical Reverse Recovery vs 5° ° 20A 10A 5. /dt - (A/µ Fig Typical Stored Charge vs. di www.irf.com 20A 10A 20A 5. 10A 5. Fig Typical Recovery Current vs 20A 10A 5. /dt Fig Typical di f IRG4PH30KD 5° ° /dt - (A/µ / ° ° /dt - (A/µ /dt vs. di /dt (rec ...
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... IRG4PH30KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on Same ty pe device as D . d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Fig. 18d - , µ S ...
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... Figure 18e 50V µ Figure 19. www.irf.com D.U. 480V Figure 20. IRG4PH30KD 960V @25° ...
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... IRG4PH30KD Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Case Outline — TO-247AC (. (. (. (. (. (. (. (. (. (. ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...