IRG4BC10S International Rectifier, IRG4BC10S Datasheet
IRG4BC10S
Specifications of IRG4BC10S
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IRG4BC10S Summary of contents
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... T Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 sec. Mounting Torque, 6- Screw. Thermal Resistance θ θ θ www.irf.com IRG4BC10S n-channel -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N• 91786B Standard Speed IGBT V = 600V CES ...
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... IRG4BC10S Electrical Characteristics @ T V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage „ (BR)ECS Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance … Gate-to-Emitter Leakage Current ...
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... Power Dissipation = 9 Frequency (kHz) (Load Current = I of fundamental) RMS 100 T = 150 C ° 150 15V 1 2.4 2.8 3.2 6 Fig Typical Transfer Characteristics IRG4BC10S Triangular wave: Clamp voltage: 80% of rated 10 ° ° 50V CC 5µs PULSE WIDTH 5µs PULSE WIDTH Gate-to-Emitter Voltage (V) GE ...
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... IRG4BC10S 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 0.1 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3. 15V PULSE WIDTH 2.50 2.00 1.50 1.00 -60 -40 -20 ...
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... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs. 100 0.1 80 100 -60 -40 -20 Fig Typical Switching Losses vs. IRG4BC10S = 400V = Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω = Ohm = 15V = 480V 100 120 140 160 ° Junction Temperature ( Junction Temperature ...
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... IRG4BC10S 12 Ω Ohm 150 C ° 480V 15V Collector Current (A) C Fig Typical Switching Losses vs. Collector Current 6 100 V = 20V 125 SAFE OPERATING AREA 100 , Collector-to-Emitter Voltage (V) Fig Turn-Off SOA www.irf.com 1000 ...
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... Driver same type as D.U.T 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. - 50V 1000V Ã 10 90% 10 d(on) www.irf.com D.U. D.U.T. Driver 90% t d(off t=5µ off off IRG4BC10S 480µF 960V - - - 7 ...
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... IRG4BC10S IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 Data and specifications subject to change without notice. Visit us at www.irf.com for sales contact information. 07/2007 TAC Fax: (310) 252-7903 www.irf.com ...