IRG4BC20W-S International Rectifier, IRG4BC20W-S Datasheet

IGBT WARP 600V 13A D2PAK

IRG4BC20W-S

Manufacturer Part Number
IRG4BC20W-S
Description
IGBT WARP 600V 13A D2PAK
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4BC20W-S

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 6.5A
Current - Collector (ic) (max)
13A
Power - Max
60W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*IRG4BC20W-S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4BC20W-SPBF
Manufacturer:
IR
Quantity:
20 000
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
Features
Features
www.irf.com
Features
Features
Features
• Lower switching losses allow more cost-effective
• Of particular benefit to single-ended converters and
• Low conduction losses and minimal minority-carrier
• Designed expressly for Switch-Mode Power
• Industry-benchmark switching losses improve
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
CM
LM
operation than power MOSFETs up to 150kHz
("hard switched" mode)
boost PFC topologies 150W and higher
recombination make these an excellent option for
resonant mode switching as well (up to >>300kHz)
Supply and PFC (power factor correction)
applications
efficiency of all power supply topologies
tighter parameters distribution, exceptional reliability
J
STG
CES
GE
ARV
D
D
JC
CS
JA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Parameter
Parameter

G
N-channel
300 (0.063 in. (1.6mm) from case )
IRG4BC20W-S
Typ.
1.44
–––
–––
0.5
E
C
-55 to + 150
Max.
± 20
600
200
6.5
13
52
52
60
24
D
2
Pak
@V
V
CE(on) typ.
Max.
V
GE
–––
–––
2.1
40
CES
= 15V, I
PD - 94076
= 600V
= 2.16V
C
= 6.5A
Units
Units
g (oz)
°C/W
mJ
W
°C
A
V
V
1
5/24/00

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IRG4BC20W-S Summary of contents

Page 1

... STG Soldering Temperature, for 10 seconds Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com IRG4BC20W N-channel  - 150 300 (0.063 in. (1.6mm) from case ) Typ. ––– 0.5 ––– 1. 94076 V = 600V ...

Page 2

... IRG4BC20W-S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage „ V (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance … Zero Gate Voltage Collector Current CES ...

Page 3

... Fig Typical Output Characteristics www.irf.com uty c yc le: 50 125° 90°C s ink G ate drive as spec ified tio Frequency (kHz) (Load Current = I of fundamental) RMS 100 T = 150 15V Fig Typical Transfer Characteristics IRG4BC20W-S T ria ° ° 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage ( ...

Page 4

... IRG4BC20W 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 15V PULSE WIDTH 2.0 1.0 -60 -40 -20 125 150 ° ...

Page 5

... Gate Resistance G Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs 0.1 0.01 -60 -40 - Fig Typical Switching Losses vs. IRG4BC20W-S = 400V = 6. Total Gate Charge (nC) G Gate-to-Emitter Voltage 50 = Ohm = 15V = 480V 6 3. 100 120 140 160 ° Junction Temperature ( ...

Page 6

... IRG4BC20W-S 0 Ohm 150 C ° 480V 15V GE 0.6 0.4 0.2 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 100 SAFE OPERATING AREA 20V o = 125 C 10 100 , Collector-to-Emitter Voltage (V) Fig Turn-Off SOA www.irf.com 1000 ...

Page 7

... www.irf.com 480V ‚ .T. D river ‚ ƒ ff t=5µ IRG4BC20W-S 480V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4BC20W Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) - AX. 2 1 5.49 (.6 10) 1 4.73 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 0 .08 (.20 0) 0.25 (. FTER & 4. TRO L LIN ATSINK & SIO Pak Part Marking Information TIO (. (.16 5) 1 ...

Page 9

... Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.1/01 IRG4BC20W (. (. (. (. (. (. (. (. ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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