IRG4RC10KD International Rectifier, IRG4RC10KD Datasheet - Page 3

• Manufacturer Part Number: IRG4RC10KD
• Description: DIODE IGBT 600V 9.0A D-PAK
• Manufacturer: International Rectifier

Specifications of IRG4RC10KD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.62V @ 15V, 5A
• Current - Collector (ic) (max): 9A
• Power - Max: 38W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Package: D-Pak
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 600
• Ic @ 25c (a): 9
• Ic @ 100c (a): 5
• Vce(on)@25c Typ (v): 2.39
• Vce(on)@25c Max (v): 2.62
• Ets Typ (mj): 0.39
• Ets Max (mj): 0.48
• Qrr Typ Nc 25c: 40
• Qrr Max Nc 25c: 60
• Vf Typ: 1.50
• Pd @25c (w): 38
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: *IRG4RC10KD

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100
Fig. 2 - Typical Output Characteristics
10
1.6
1.2
0.8
0.4
0.0
1
1.0
0.1
S q u a re w a v e :
2.0
V
CE
, Collector-to-Emitter Voltage (V)
6 0% of rate d
3.0
Id e a l d io d e s
I
volta ge
4.0

T = 25 C

J
Fig. 1 - Typical Load Current vs. Frequency

T = 150 C
V
20µs PULSE WIDTH
J
GE
5.0
°
= 15V
(Load Current = I
°
1
6.0
7.0
f, Frequency (KHz)
RMS
of fundamental)
100
Fig. 3 - Typical Transfer Characteristics
10
1
5

T = 150 C
J
V
10
GE
°
, Gate-to-Emitter Voltage (V)

IRG4RC10KD
T = 25 C
J
10
For both:
D uty cy cle: 50%
T = 125°C
T
G ate drive as specified
P ow e r Dis sip ation =
J
s ink
°
= 90°C
55

V
5µs PULSE WIDTH
CC
15
= 50V
1.4
W
3
100
20