J112G ON Semiconductor, J112G Datasheet

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J112G

Manufacturer Part Number
J112G
Description
TRANS GP JFET N-CH 35V TO-92
Manufacturer
ON Semiconductor
Datasheet

Specifications of J112G

Current - Drain (idss) @ Vds (vgs=0)
5mA @ 15V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
35V
Voltage - Cutoff (vgs Off) @ Id
1V @ 1µA
Resistance - Rds(on)
50 Ohm
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
350mW
Configuration
Single
Transistor Polarity
N-Channel
Gate-source Breakdown Voltage
35 V
Drain Current (idss At Vgs=0)
5 mA
Mounting Style
Through Hole
Breakdown Voltage Vbr
-35V
Gate-source Cutoff Voltage Vgs(off) Max
-35V
Power Dissipation Pd
350mW
Operating Temperature Range
-65°C To +150°C
No. Of Pins
3
Leaded Process Compatible
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
J112G
Manufacturer:
ON Semiconductor
Quantity:
500
J111, J112
JFET Chopper Transistors
N−Channel — Depletion
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
MAXIMUM RATINGS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Drain −Gate Voltage
Gate −Source Voltage
Gate Current
Total Device Dissipation @ T
Derate above = 25°C
Lead Temperature
Operating and Storage Junction
Temperature Range
Pb−Free Packages are Available*
Rating
A
= 25°C
Symbol
T
J
V
V
P
T
, T
I
DG
GS
G
D
L
stg
−65 to +150
Value
−35
−35
350
300
2.8
50
1
mW/°C
mAdc
Unit
Vdc
Vdc
mW
°C
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
(Note: Microdot may be in either location)
ORDERING INFORMATION
GATE
1
J11x = Device Code
A
Y
WW
G
3
2
MARKING DIAGRAM
3
http://onsemi.com
= Assembly Location
= Year
= Work Week
= Pb−Free Package
x = 1 or 2
AYWW G
J11x
2 SOURCE
Publication Order Number:
G
CASE 29−11
1 DRAIN
STYLE 5
TO−92
J111/D

Related parts for J112G

J112G Summary of contents

Page 1

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 2 ...

Page 2

... ORDERING INFORMATION Device J111RL1 J111RL1G J111RLRA J111RLRAG J111RLRP J111RLRPG J112 J112G J112RL1 J112RL1G J112RLRA J112RLRAG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. J111, J112 (T = 25°C unless otherwise noted) ...

Page 3

TYPICAL SWITCHING CHARACTERISTICS 1000 500 ′ J111 K D 200 J112 100 J113 5.0 K 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7 DRAIN CURRENT (mA) D ...

Page 4

J113 7.0 5 25°C channel 3.0 2.0 0.5 0.7 1.0 2.0 3.0 5.0 7 DRAIN CURRENT (mA) D Figure 6. Typical Forward Transfer Admittance 200 ...

Page 5

... ISSUE SECTION X−X N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

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