MMBF5457LT1G ON Semiconductor, MMBF5457LT1G Datasheet
MMBF5457LT1G
Specifications of MMBF5457LT1G
MMBF5457LT1GOS
MMBF5457LT1GOSTR
Available stocks
Related parts for MMBF5457LT1G
MMBF5457LT1G Summary of contents
Page 1
... D 1.8 mW/°C °C/W R 556 qJA ° −55 to +150 J stg MMBF5457LT1 MMBF5457LT1G †For information on tape and reel specifications, Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 2 SOURCE 3 GATE 1 DRAIN 3 SOT−23 (TO−236) CASE 318 1 STYLE 10 ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage = 10 mAdc Gate Reverse Current ( Vdc Vdc 100°C) GS ...
Page 3
V V GS(off) 1.0 0.8 0.6 0.4 0 DRAIN−SOURCE VOLTAGE (VOLTS) DS Figure 2. Typical Drain Characteristics MMBF5457LT1 TYPICAL CHARACTERISTICS V ...
Page 4
V V GS(off DRAIN−SOURCE VOLTAGE (VOLTS) DS Figure 4. Typical Drain Characteristics −5 GS(off ...
Page 5
... 0.95 0.037 0.035 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MMBF5457LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...
Page 6
... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MMBF5457LT1 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi ...