DMN2004DWK-7 Diodes Inc, DMN2004DWK-7 Datasheet - Page 3
![MOSFET DUAL N-CHAN 20V SOT-363](/photos/1/37/13792/sot-363_pkg_sml.jpg)
DMN2004DWK-7
Manufacturer Part Number
DMN2004DWK-7
Description
MOSFET DUAL N-CHAN 20V SOT-363
Manufacturer
Diodes Inc
Datasheet
1.DMN2004DWK-7.pdf
(4 pages)
Specifications of DMN2004DWK-7
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
550 mOhm @ 540mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
540mA
Vgs(th) (max) @ Id
1V @ 250µA
Input Capacitance (ciss) @ Vds
150pF @ 16V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.55 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.54 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
DMN2004DWKDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DMN2004DWK-7
Manufacturer:
Diodes Inc
Quantity:
56 141
Part Number:
DMN2004DWK-7
Manufacturer:
DIODES/美台
Quantity:
20 000
DMN2004DWK
°
I , DRAIN CURRENT (A)
T , JUNCTION TEMPERATURE ( C)
D
j
Fig. 7
On-Resistance vs. Drain Current and Gate Voltage
Fig. 8
Static Drain-Source, On-Resistance vs. Temperature
1000
I , DRAIN CURRENT (mA)
V , DRAIN SOURCE VOLTAGE (V)
D
DS
Fig. 11 Forward Transfer Admittance vs. Drain Current
Fig. 12 Capacitance Variation
3 of 4
DMN2004DWK
November 2007
www.diodes.com
© Diodes Incorporated
Document number: DS30935 Rev. 3 - 2