SI4906DY-T1-E3 Vishay, SI4906DY-T1-E3 Datasheet - Page 5
![MOSFET N-CH DUAL 40V 6.6A 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4906DY-T1-E3
Manufacturer Part Number
SI4906DY-T1-E3
Description
MOSFET N-CH DUAL 40V 6.6A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4906DY-T1-E3.pdf
(7 pages)
Specifications of SI4906DY-T1-E3
Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
39 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
6.6A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
625pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 50 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.039 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
5.3 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
6.6A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2.2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4906DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4906DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 952
Part Number:
SI4906DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73867
S09-2432-Rev. C, 16-Nov-09
4.0
3.2
2.4
1.6
0.8
0.0
0
Power Derating, Junction-to-Foot
25
D
T
C
is based on T
50
- Case Temperature (°C)
75
J(max)
100
8
6
5
3
2
0
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0.0
0
125
Power Derating, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si4906DY
125
www.vishay.com
150
5