SI9933BDY-T1-E3 Vishay, SI9933BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI9933BDY-T1-E3
• Description: MOSFET DUAL P-CH 20V 3.6A 8-SOIC
• Manufacturer: Vishay

Specifications of SI9933BDY-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI9933BDY-T1-E3TR

Si9933BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10
- 25
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Threshold Voltage
J
- Temperature (°C)
25
I
D
10
= 250 µA
- 3
Single Pulse
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
100
1
0.1
10
- 2
* V
Limited by R
125
Limited
GS
I
D(on)
Single Pulse
T
A
V
= 25 °C
minimum V
150
DS
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
DS(on)
Safe Operating Area
1
10
- 1
BVDSS Limited
*
GS
at which R
DS(on)
10
I
50
40
30
20
10
DM
1
0
10
is specified
Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
-
2
10
100
-
1
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
-
T
t
Time (s)
A
1
S09-1925-Rev. C, 28-Sep-09
= P
t
2
Document Number: 72748
DM
Z
thJA
10
thJA
100
t
t
1
2
(t)
= 90 °C/W
100
600
600