SI4922BDY-T1-E3 Vishay, SI4922BDY-T1-E3 Datasheet

MOSFET N-CH DUAL 30V 8A 8-SOIC

SI4922BDY-T1-E3

Manufacturer Part Number
SI4922BDY-T1-E3
Description
MOSFET N-CH DUAL 30V 8A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4922BDY-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
1.8V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 10V
Input Capacitance (ciss) @ Vds
2070pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 50 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.016 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
8 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
8A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
13.5mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.8V
Fall Time
8 ns, 54 ns
Rise Time
27 ns, 53 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4922BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4922BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
33 013
Part Number:
SI4922BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 958
Part Number:
SI4922BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Ordering Information:
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package Limited.
Document Number: 74459
S09-0704-Rev. B, 27-Apr-09
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Sorce-Drain Current
Single Pulse Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
G
G
S
S
1
1
2
2
C
1
2
3
4
0.018 at V
0.024 at V
0.016 at V
= 25 °C.
R
Si4922BDY -T1-E3
Si4922BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
DS(on)
SO-8
GS
GS
GS
(Ω)
= 4.5 V
= 2.5 V
= 10 V
J
= 150 °C)
b, d
Dual N-Channel 30-V (D-S) MOSFET
8
7
6
5
(Lead (Pb)-free)
D
D
D
D
1
1
2
2
I
D
(A)
8
8
8
a, e
A
Q
= 25 °C, unless otherwise noted
g
(Typ.)
19
Steady State
t ≤ 10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
Definition
Symbol
R
R
G
thJA
thJF
1
Symbol
T
J
V
V
E
I
I
N-Channel MOSFET
I
P
, T
DM
SM
I
I
AS
GS
DS
AS
D
S
D
g
stg
and UIS tested
®
Power MOSFET
D
S
Typical
1
1
50
30
Limit
- 50 to 150
G
1.28
2
8
6.6
1.7
Limit
± 12
Maximum
11.2
2
b, c, e
2.5
3.1
30
35
35
15
8
8
b, c
N-Channel MOSFET
2
e
e
b, c
b, c
b, c
62.5
40
Vishay Siliconix
Si4922BDY
D
S
2
2
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4922BDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4922BDY -T1-E3 (Lead (Pb)-free) Si4922BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Sorce-Drain Current Single Pulse Avalanche Current ...

Page 2

... Si4922BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 74459 S09-0704-Rev. B, 27-Apr- 1.5 2.0 2.5 3000 2400 1800 1200 = 4 Si4922BDY Vishay Siliconix 2 125 ° °C J 1.2 0.8 0 °C J 0.0 0.0 0.6 1.2 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 600 C oss C rss ...

Page 4

... Si4922BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 25 °C 0.8 1.0 1.2 75 100 125 ...

Page 5

... Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4922BDY Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com ...

Page 6

... Si4922BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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