SI4925BDY-T1-E3 Vishay, SI4925BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4925BDY-T1-E3
• Description: MOSFET P-CH DUAL 30V 5.3A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4925BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.3 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -7.1A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4925BDY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72001
S09-0869-Rev. D, 18-May-09
0.08
0.06
0.04
0.02
0.00
10
50
10
8
6
4
2
0
1
0.0
0
0
V
I
D
V
DS
Source-Drain Diode Forward Voltage
GS
5
= 7.1 A
0.2
On-Resistance vs. Drain Current
= 15 V
= 4.5 V
V
10
10
SD
Q
0.4
g
- Source-to-Drain Voltage (V)
-
I
Total Gate Charge (nC)
D
15
Gate Charge
- Drain Current (A)
T
J
0.6
= 150 °C
20
20
0.8
25
T
J
1.0
30
30
= 25 °C
V
GS
= 10 V
1.2
35
40
40
1.4
2500
2000
1500
1000
0.08
0.06
0.04
0.02
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
- 25
D
rss
GS
= 7.1 A
I
D
= 10 V
2
6
= 3 A
V
V
T
GS
DS
0
C
J
C
oss
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
iss
25
Capacitance
12
4
I
D
50
= 7.1 A
Vishay Siliconix
Si4925BDY
18
6
75
100
www.vishay.com
24
8
125
150
10
30
3