SI5504DC-T1-E3 Vishay, SI5504DC-T1-E3 Datasheet
SI5504DC-T1-E3
Specifications of SI5504DC-T1-E3
Available stocks
Related parts for SI5504DC-T1-E3
SI5504DC-T1-E3 Summary of contents
Page 1
... Marking Code Bottom View Ordering Information: Si5504DC-T1-E3 (Lead (Pb)-free) Si5504DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
Page 2
... Si5504DC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
Page 3
... Drain Current (A) D On-Resistance vs. Drain Current 2 Total Gate Charge (nC) g Gate Charge Document Number: 71056 S10-0547-Rev. C, 08-Mar- 2.0 2.5 3 Si5504DC Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 400 300 C iss 200 100 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...
Page 4
... Si5504DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0 ...
Page 5
... I - Drain Current (A) D On-Resistance vs. Drain Current Document Number: 71056 S10-0547-Rev. C, 08-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 2.0 2.5 3 Si5504DC Vishay Siliconix - ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 400 320 C iss 240 160 C oss ...
Page 6
... Si5504DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Total Gate Charge (nC) g Gate Charge 150 °C J 0.1 0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.4 0 250 µA D 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.9 1.2 1 ...
Page 7
... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71056. Document Number: 71056 S10-0547-Rev. C, 08-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5504DC Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
Page 8
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...