SI4563DY-T1-E3 Vishay, SI4563DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4563DY-T1-E3
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4563DY-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8A, 6.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 2390pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V @ N Channel or 0.025 Ohm @ 10 V @ P Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 8 A @ N Channel or 6.6 A @ P Channel
• Power Dissipation: 2000 mW
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4563DY-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
- 0.2
- 0.4
- 0.6
- 0.8
0.01
0.4
0.2
0.0
0.1
20
10
- 50
1
0.00
I
D
I
D
- 25
Source-Drain Diode Forward Voltage
= 5 mA
= 250 µA
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
T
J
J
0.4
- Temperature (°C)
= 150 °C
25
50
0.6
75
0.8
T
0.01
J
100
100
0.1
10
= 25 °C
1
0.1
* V
Safe Operating Area, Junction-to-Ambient
Limited by R
1.0
125
GS
>
150
V
minimum V
1.2
DS
DS(on)
- Drain-to-Source Voltage (V)
Single Pulse
1
T
*
A
GS
= 25 °C
at which R
DS(on)
10
0.10
0.08
0.06
0.04
0.02
0.00
50
40
30
20
10
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
10 ms
100 ms
1 ms
1 s
10 s
DC
2
0.01
100
V
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
T
T
A
A
0.1
= 25 °C
5
Vishay Siliconix
= 125 °C
6
Si4563DY
7
www.vishay.com
I
D
1
= 5 A
8
9
10
10
5