SI4563DY-T1-E3 Vishay, SI4563DY-T1-E3 Datasheet - Page 5
![MOSFET N/P-CH 40V 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4563DY-T1-E3
Manufacturer Part Number
SI4563DY-T1-E3
Description
MOSFET N/P-CH 40V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4563DY-T1-E3.pdf
(12 pages)
Specifications of SI4563DY-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
8A, 6.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
85nC @ 10V
Input Capacitance (ciss) @ Vds
2390pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.016 Ohm @ 10 V @ N Channel or 0.025 Ohm @ 10 V @ P Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
8 A @ N Channel or 6.6 A @ P Channel
Power Dissipation
2000 mW
Mounting Style
SMD/SMT
Continuous Drain Current Id
8A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4563DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4563DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
- 0.2
- 0.4
- 0.6
- 0.8
0.01
0.4
0.2
0.0
0.1
20
10
- 50
1
0.00
I
D
I
D
- 25
Source-Drain Diode Forward Voltage
= 5 mA
= 250 µA
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
T
J
J
0.4
- Temperature (°C)
= 150 °C
25
50
0.6
75
0.8
T
0.01
J
100
100
0.1
10
= 25 °C
1
0.1
* V
Safe Operating Area, Junction-to-Ambient
Limited by R
1.0
125
GS
>
150
V
minimum V
1.2
DS
DS(on)
- Drain-to-Source Voltage (V)
Single Pulse
1
T
*
A
GS
= 25 °C
at which R
DS(on)
10
0.10
0.08
0.06
0.04
0.02
0.00
50
40
30
20
10
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
10 ms
100 ms
1 ms
1 s
10 s
DC
2
0.01
100
V
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
T
T
A
A
0.1
= 25 °C
5
Vishay Siliconix
= 125 °C
6
Si4563DY
7
www.vishay.com
I
D
1
= 5 A
8
9
10
10
5