SI7983DP-T1-E3 Vishay, SI7983DP-T1-E3 Datasheet - Page 11
![MOSFET DUAL P-CH 20V 8-SOIC](/photos/5/42/54289/pkg_5881_sml.jpg)
SI7983DP-T1-E3
Manufacturer Part Number
SI7983DP-T1-E3
Description
MOSFET DUAL P-CH 20V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI7983DP-T1-E3
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 12A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7.7A
Vgs(th) (max) @ Id
1V @ 600µA
Gate Charge (qg) @ Vgs
74nC @ 4.5V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Transistor Polarity
P Channel
Continuous Drain Current Id
60A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
24mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7983DP-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7983DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK
www.vishay.com
16
Return to Index
Return to Index
(0.61)
(0.66)
0.024
0.026
(1.27)
0.050
(0.82)
0.032
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.024
(0.61)
®
SO-8 Dual
(6.61)
0.260
(3.81)
0.150
(1.02)
0.040
Document Number: 72600
Revision: 21-Jan-08