SI7983DP-T1-E3 Vishay, SI7983DP-T1-E3 Datasheet - Page 11

• Manufacturer Part Number: SI7983DP-T1-E3
• Description: MOSFET DUAL P-CH 20V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7983DP-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 12A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.7A
• Vgs(th) (max) @ Id: 1V @ 600µA
• Gate Charge (qg) @ Vgs: 74nC @ 4.5V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8 Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 24mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7983DP-T1-E3TR

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK
www.vishay.com
16
Return to Index
Return to Index
(0.61)
(0.66)
0.024
0.026
(1.27)
0.050
(0.82)
0.032
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.024
(0.61)
®
SO-8 Dual
(6.61)
0.260
(3.81)
0.150
(1.02)
0.040
Document Number: 72600
Revision: 21-Jan-08