SI7222DN-T1-E3 Vishay, SI7222DN-T1-E3 Datasheet

MOSFET DUAL N-CH 40V 1212-8

SI7222DN-T1-E3

Manufacturer Part Number
SI7222DN-T1-E3
Description
MOSFET DUAL N-CH 40V 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7222DN-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
42 mOhm @ 5.7A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
1.6V @ 250µA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 20V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Minimum Operating Temperature
- 50 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.042 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
18 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
5.7 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
6A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
47mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.6V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7222DN-T1-E3TR
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73439
S-83052-Rev. B, 29-Dec-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
Ordering Information: Si7222DN-T1-E3 (Lead (Pb)-free)
DS
40
(V)
8
D1
3.30 mm
7
D1
0.047 at V
0.042 at V
6
PowerPAK 1212-8
D2
R
5
DS(on)
Si7222DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
D2
GS
GS
(Ω)
1
J
= 4.5 V
= 10 V
= 150 °C)
S1
Dual N-Channel 40 V (D-S) MOSFET
2
G1
Bottom View
3
S2
3.30 mm
4
G2
I
D
6
5
(A)
e
e
c, d
A
= 25 °C, unless otherwise noted
Q
g
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
8 nC
C
C
C
C
C
(Typ.)
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Low Thermal Resistance PowerPAK
• Primary Side Switch
• Synchronus Rectification
G
Symbol
T
1
J
Available
Package with Small Size and Low 1.07 mm
Profile
V
V
E
I
I
P
, T
I
DM
I
AS
DS
GS
AS
N-Channel MOSFET
D
S
D
stg
D
S
1
1
®
Power MOSFET
G
- 55 to 150
2
5.7
4.3
2.0
2.5
1.6
Limit
± 12
17.8
11.4
N-Channel MOSFET
260
8.5
40
24
13
6
5
6
e
e
a, b
a, b
e
a, b
a, b
a, b
D
S
2
2
Vishay Siliconix
®
Si7222DN
www.vishay.com
Unit
mJ
°C
W
V
A
1

Related parts for SI7222DN-T1-E3

SI7222DN-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7222DN-T1-E3 (Lead (Pb)-free) Si7222DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7222DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 94 °C/W. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient ...

Page 3

... Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73439 S-83052-Rev. B, 29-Dec-08 Symbol Test Conditions ° 1.7 A, dI/dt = 100 A/µ Si7222DN Vishay Siliconix Min. Typ. Max 0.76 1 ° www.vishay.com Unit ...

Page 4

... Si7222DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.050 0.047 0.044 0.041 0.038 0.035 0.032 0.029 0.026 0.023 0.020 Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 5 0.0 2.2 4 Total Gate Charge (nC) ...

Page 5

... D 75 100 125 150 100 Limited DS(on 0 °C A Single Pulse 0.01 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si7222DN Vishay Siliconix 0. 5 0.16 0. 125 °C 0. ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 ...

Page 6

... Si7222DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Case Temperature (°C) C Power, Junction-to-Case * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. www.vishay.com ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73439. Document Number: 73439 S-83052-Rev. B, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7222DN Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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