SI4561DY-T1-GE3 Vishay, SI4561DY-T1-GE3 Datasheet

MOSFET N/P-CH 40V 8-SOIC

SI4561DY-T1-GE3

Manufacturer Part Number
SI4561DY-T1-GE3
Description
MOSFET N/P-CH 40V 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4561DY-T1-GE3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35.5 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
640pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.0355 Ohm @ 10 V @ N Channel or 0.035 Ohm @ 10 V @ P Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.6 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
6.8A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
29.5mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4561DY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4561DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
Ordering Information: Si4561DY-T1-E3 (Lead (Pb)-free)
N-Channel
P-Channel
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
G
G
S
S
C
1
1
2
2
= 25 °C.
V
- 40
(V)
40
1
2
3
4
DS
Si4561DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.0425 at V
0.047 at V
0.0355 at V
0.035 at V
Top View
SO-8
J
R
N- and P-Channel 40-V (D-S) MOSFET
= 150 °C)
DS(on)
b, d
GS
GS
GS
GS
= - 4.5 V
(Ω)
= - 10 V
8
7
6
5
= 4.5 V
= 10 V
D
D
D
D
1
1
2
2
I
D
- 7.2
- 6.2
6.8
6.2
(A)
A
a
= 25 °C, unless otherwise noted
Steady State
T
T
T
L = 0 1 mH
T
T
T
T
T
T
T
(Typ.)
C
C
C
C
C
A
A
A
A
A
t ≤ 10 s
5.3
Q
17
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
g
Symbol
Symbol
FEATURES
APPLICATIONS
T
• Halogen-free According to IEC 61249-2-21
• Backlight Inverter for LCD Display
J
R
R
V
V
E
I
I
I
P
, T
I
DM
SM
I
AS
thJA
thJF
DS
GS
AS
D
S
D
Available
TrenchFET
stg
G
1
N-Channel MOSFET
Typ.
54
33
N-Channel
N-Channel
®
1.25
5.6
4.4
1.6
2.0
Power MOSFET
2.45
6.8
5.4
2.5
3.0
1.9
D
S
40
20
20
7
1
1
b, c
b, c
b, c
b, c
b, c
Max.
64
42
- 55 to 150
± 20
Typ.
G
50
31
2
P-Channel
P-Channel
P-Channel MOSFET
- 5.6
- 4.4
- 1.6
Vishay Siliconix
1.25
2.0
11.25
- 7.2
- 5.7
- 2.5
2.10
- 40
- 20
- 20
3.3
15
b, c
b, c
b, c
b, c
b, c
Si4561DY
Max.
62.5
S
D
37
2
2
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4561DY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si4561DY-T1-E3 (Lead (Pb)-free) Si4561DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... Si4561DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... DD L ≅ Ω 4 GEN g P-Channel t d(off Ω ≅ 4 GEN ° 1 1 N-Channel dI/dt = 100 A/µ ° P-Channel dI/ 100 A/µ Si4561DY Vishay Siliconix a Min. Typ. Max Ω P-Ch 79 120 N- P- Ω N-Ch 2.5 P-Ch - 2.5 N-Ch ...

Page 4

... Si4561DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.060 0.052 0.044 0.036 0.028 0.020 Drain Current (A) D On-Resistance vs. Drain Current 0.0 2.5 5 Total Gate Charge (nC) g Gate Charge www.vishay.com thru 1.5 2 ...

Page 5

... Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4561DY Vishay Siliconix Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient 1 ms ...

Page 6

... Si4561DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Single Pulse 0. Document Number: 69730 S09-0220-Rev. C, 09-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4561DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 °C/W thJA ( ...

Page 8

... Si4561DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.050 0.044 0.038 0.032 0.026 0.020 Drain Current (A) D On-Resistance vs. Drain Current Total Gate Charge (nC) g Gate Charge www.vishay.com thru 1.5 2.0 2.5 ...

Page 9

... I = 250 µ 100 125 150 100 Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Ambient Si4561DY Vishay Siliconix 0.12 I 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 100 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient ...

Page 10

... Si4561DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69730. Document Number: 69730 S09-0220-Rev. C, 09-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4561DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 ° ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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