IRF7329TRPBF International Rectifier, IRF7329TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7329TRPBF
• Description: MOSFET 2P-CH 12V 9.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7329TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3450pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7329PBFTR

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100
0.1
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
100
1
10
0.1
1
TOP
BOTTOM
1.0
-V
T J = 150°C
DS
VGS
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
-V GS , Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1.4
T J = 25°C
1
-1.2V
20µs PULSE WIDTH
T = 25 C
V DS = -10V
20µs PULSE WIDTH
J
1.8
°
10
2.2
100
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
10
1
-60 -40 -20
0.1
Fig 4. Normalized On-Resistance
I =
TOP
BOTTOM
D
-V
-9.2A
DS
T , Junction Temperature ( C)
VGS
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
20 40 60 80 100 120 140 160
1
20µs PULSE WIDTH
T = 150 C
J
-1.2V
°
V
°
GS
=
-4.5V
3
10