IRF7756TRPBF International Rectifier, IRF7756TRPBF Datasheet - Page 2
IRF7756TRPBF
Manufacturer Part Number
IRF7756TRPBF
Description
MOSFET P-CH DUAL 12V 4.3A 8TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7756TRPBF.pdf
(9 pages)
Specifications of IRF7756TRPBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 4.5V
Input Capacitance (ciss) @ Vds
1400pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Configuration
Dual
Transistor Polarity
Dual P-Channel
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 3.4 A
Power Dissipation
1 W
Mounting Style
SMD/SMT
Gate Charge Qg
12 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7756TRPBF
IRF7756TRPBFTR
IRF7756TRPBFTR
Notes:
IRF7756PbF
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
I
S
SM
d(on)
r
d(off)
f
rr
DSS
GSS
GS(th)
fs
(BR)DSS
SD
iss
oss
rss
g
gs
gd
rr
Repetitive rating; pulse width limited by
DS(on)
Pulse width ≤ 400µs duty cycle ≤
max. junction temperature.
(BR)DSS
2
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
-0.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1400 –––
–––
–––
–––
–––
-12
––– -0.006 –––
–––
13
Surface mounted on FR-4 board, ≤ 10sec
–––
––– 0.040
––– 0.058
––– 0.087
–––
–––
–––
–––
––– -100
–––
160
170
310
240
–––
1.8
2.9
12
12
18
35
20
-1.2
–––
-0.9
–––
-1.0
100
–––
–––
–––
–––
–––
–––
-25
2.7
4.4
-17
-1.0
18
53
30
V/°C
µA
nC
nC
ns
pF
ns
nA
V
Ω
V
S
V
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
ƒ = 1.0kHz
showing the
T
D
D
V
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
GS
= -4.3A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= V
= -10V
= 0V, I
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -10V, I
= -9.6V, V
= -9.6V, V
= -8.0V
= 8.0V
= -6.0V
= -4.5V
= -6.0V,
= 0V
= -4.5V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
= -1.0A, V
= -1.0A
D
D
D
= -250µA
GS
GS
= -4.3A
= -4.3A
= -3.4A
= -2.2A
= 0V, T
= 0V
D
www.irf.com
= -1mA
GS
J
G
= 70°C
= 0V
S
D