IRF7306TR International Rectifier, IRF7306TR Datasheet - Page 5

• Manufacturer Part Number: IRF7306TR
• Description: MOSFET 2P-CH 30V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7306TR

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

100
4.0
3.0
2.0
1.0
0.0
0.1
10
0.0001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Ambient Temperature
50
T , Case Temperature
C
(THERMAL RESPONSE)
0.001
75
SINGLE PULSE
100
0.01
( C)
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.1
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
R
Pulse Width
Duty Factor
G
-10 V
t
d(on)
V
1. Duty factor D =
2. Peak T = P
Notes:
GS
1
V
t
r
DS
J
µs
DM
x Z
t / t
1
D.U.T.
thJA
P
2
10
IRF7306
R
DM
t
d(off)
D
+ T
A
t
1
t
f
t
2
+
-
V
DD
100