IRF7904PBF International Rectifier, IRF7904PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7904PBF
• Description: MOSFET N-CHAN DUAL 30V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7904PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.6A, 11A
• Vgs(th) (max) @ Id: 2.25V @ 25µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 910pF @ 15V
• Power - Max: 1.4W, 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100.0
10.0
100
100
0.1
1.0
0.1
10
10
1
1
Fig 1. Typical Output Characteristics
0.1
0.1
1.0
Fig 5. Typical Transfer Characteristics
Fig 3. Typical Output Characteristics
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2.0
2.5V
2.5V
Q1 - Control FET
1
1
V DS = 15V
≤ 60µs PULSE WIDTH
T J = 25°C
≤ 60µs PULSE WIDTH
Tj = 150°C
3.0
≤ 60µs PULSE WIDTH
Tj = 25°C
10
10
TOP
BOTTOM
TOP
BOTTOM
4.0
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
Typical Characteristics
100
100
5.0
100.0
Fig 2. Typical Output Characteristics
10.0
100
100
0.1
1.0
0.1
10
10
1
1
0.1
0.1
Fig 6. Typical Transfer Characteristics
1.0
Fig 4. Typical Output Characteristics
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
Q2 - Synchronous FET
2.0
2.5V
2.5V
1
1
T J = 25°C
V DS = 15V
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 150°C
≤ 60µs PULSE WIDTH
Tj = 25°C
3.0
10
10
TOP
BOTTOM
TOP
BOTTOM
4.0
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
100
100
5.0
3