IRF7314 International Rectifier, IRF7314 Datasheet - Page 3

• Manufacturer Part Number: IRF7314
• Description: MOSFET 2P-CH 20V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7314

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7314

100
0.1
100
10
10
Fig 1. Typical Output Characteristics
1
Fig 3. Typical Transfer Characteristics
1
0.1
1.5
TOP
BOTTOM
-V
2.0
-V
DS
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
2.5
T = 25 C
J
3.0
°
1
T = 150 C
3.5
J
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
-1.50V
J
DS
= -10V
4.0
°
°
4.5
5.0
10
100
0.1
10
100
0.1
1
10
Fig 2. Typical Output Characteristics
0.1
1
0.2
TOP
BOTTOM
Fig 4. Typical Source-Drain Diode
-V
-V
DS
0.4
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
SD
, Drain-to-Source Voltage (V)
T = 150 C
Forward Voltage
,Source-to-Drain Voltage (V)
J
0.6
°
0.8
1
T = 25 C
20µs PULSE WIDTH
T = 150 C
J
IRF7314
J
-1.50V
1.0
°
°
V
GS
1.2
= 0 V
10
1.4