SI1016X-T1-E3 Vishay, SI1016X-T1-E3 Datasheet - Page 6
![MOSFET N/P-CH COMPL 20V SOT563F](/photos/5/42/54218/pkg_5880_sml.jpg)
SI1016X-T1-E3
Manufacturer Part Number
SI1016X-T1-E3
Description
MOSFET N/P-CH COMPL 20V SOT563F
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI1016X-T1-GE3.pdf
(8 pages)
Specifications of SI1016X-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
700 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
485mA, 370mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.7 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.485 A
Power Dissipation
280 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
600mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
700mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1016X-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1016X-T1-E3
Manufacturer:
VISHAY
Quantity:
74 000
Si1016X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (T
www.vishay.com
6
1000
- 0.1
- 0.2
- 0.3
100
0.3
0.2
0.1
0.0
10
1
0.0
- 50
Threshold Voltage Variance vs. Temperature
Source-Drain Diode Forward Voltage
0.2
- 25
T
J
V
= 25 °C
SD
0.4
T
- Source-to-Drain Voltage (V)
0
J
T
J
= 125 °C
- T emperature (°C)
0.6
25
I
0.8
D
50
= 0.25 mA
T
J
7
6
5
4
3
2
1
0
- 50
= - 55 °C
1.0
75
- 25
1.2
100
BV
GSS
0
T
1.4
125
J
- T emperature (°C)
vs. Temperature
A
25
= 25 °C, unless otherwise noted)
50
75
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
- 50
100
0
I
On-Resistance vs. Gate-to-Source Voltage
D
= 200 mA
- 25
125
V
GS
1
V
= 4.5 V
GS
I
0
GSS
- Gate-to-Source Voltage (V)
T
J
2
- T emperature (°C)
vs. Temperature
25
S10-2432-Rev. E, 25-Oct-10
I
3
D
Document Number: 71168
= 350 mA
50
4
75
100
5
125
6