SI1551DL-T1-E3 Vishay, SI1551DL-T1-E3 Datasheet

MOSFET N/P-CH 20V SC70-6

SI1551DL-T1-E3

Manufacturer Part Number
SI1551DL-T1-E3
Description
MOSFET N/P-CH 20V SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI1551DL-T1-E3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.9 Ohm @ 290mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
290mA, 410mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.5nC @ 4.5V
Power - Max
270mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
1.9 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.29 A @ N Channel or 0.41 A @ P Channel
Power Dissipation
270 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
300mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
1.9ohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1551DL-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1551DL-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
25 225
Part Number:
SI1551DL-T1-E3
Manufacturer:
RECOM
Quantity:
500
Part Number:
SI1551DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI1551DL-T1-E3
Quantity:
70 000
Notes
a.
Document Number: 71255
S-42353—Rev. C, 20-Dec-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Surface Mounted on 1” x 1” FR4 Board.
i
N-Channel
P-Channel
J
ti
t A bi
Parameter
V
Ordering Information: Si1551DL-T1
DS
J
J
a
a
−20
20
= 150_C)
= 150_C)
t
a
a
(V)
Parameter
Complementary 20-V (D-S) MOSFET
G
D
a
a
S
1
1
2
0.995 @ V
1.600 @ V
1.800 @ V
1.9 @ V
3.7 @ V
4.2 @ V
1
2
3
r
SC-70 (6-LEADS)
a
DS(on)
Si1551DL-T1—E3 (Lead (Pb)-Free)
T
T
T
T
GS
GS
GS
SOT-363
Top View
A
A
A
A
GS
GS
GS
= 25_C
= 85_C
= 25_C
= 85_C
= 4.5 V
= 2.7 V
= 2.5 V
(W)
= −4.5 V
= −2.7 V
= −2.5 V
A
= 25_C UNLESS OTHERWISE NOTED)
Symbol
Steady State
Steady State
6
5
4
T
t v 5 sec
J
V
V
I
P
P
, T
DM
I
I
I
GS
DS
D
D
S
D
D
D
G
S
I
stg
D
−0.44
−0.34
−0.32
0.30
0.22
0.21
1
2
2
(A)
5 secs
0.30
0.22
0.25
0.30
0.16
Symbol
Qg (Typ)
N-Channel
R
R
R
0.72
0.52
thJA
thJF
0.6
20
Steady State
Marking Code
RD XX
0.29
0.21
0.23
0.27
0.14
Typical
Part # Code
−55 to 150
360
400
300
"12
Lot Traceability
and Date Code
5 secs
−0.44
−0.31
−0.25
0.30
0.16
Maximum
P-Channel
Vishay Siliconix
415
460
350
−1.0
−20
Steady State
Si1551DL
−0.41
−0.30
−0.23
0.27
0.14
www.vishay.com
Unit
_C/W
C/W
Unit
_C
W
W
V
V
A
A
1

Related parts for SI1551DL-T1-E3

SI1551DL-T1-E3 Summary of contents

Page 1

... N-Channel 0.995 @ V 1.600 @ V P-Channel −20 1.800 @ Ordering Information: Si1551DL-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Maximum Power Dissipation ...

Page 2

... Si1551DL Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage Gate Threshold Voltage Gate Body Leakage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current a a Drain-Source On-State Resistance ...

Page 3

... Total Gate Charge (nC) g Document Number: 71255 S-42353—Rev. C, 20-Dec- thru 3 2 1.5 V 2.0 2 0.4 0.5 0.6 0.6 0.8 Si1551DL Vishay Siliconix N−CHANNEL Transfer Characteristics 0 −55_C C 0.5 25_C 0.4 0.3 0.2 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2 ...

Page 4

... Si1551DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 0.1 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.2 0 250 mA D −0.0 −0.1 −0.2 −0.3 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient ...

Page 5

... Drain Current (A) D Document Number: 71255 S-42353—Rev. C, 20-Dec-04 − Square Wave Pulse Duration (sec thru 1.5 V 2.0 2 0.8 1.0 Si1551DL Vishay Siliconix N−CHANNEL −1 1 P−CHANNEL Transfer Characteristics 1 −55_C C 0.8 25_C 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1 ...

Page 6

... Si1551DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 0. 0.0 0.1 0.2 0.3 Q − Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C J 0.1 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0 250 mA D 0.2 0.1 0.0 − ...

Page 7

... Document Number: 71255 S-42353—Rev. C, 20-Dec-04 −2 − Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot −2 10 Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si1551DL Vishay Siliconix P−CHANNEL Notes ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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